2SB859 datasheet, аналоги, основные параметры
Наименование производителя: 2SB859
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO220
Аналоги (замена) для 2SB859
- подборⓘ биполярного транзистора по параметрам
2SB859 даташит
..1. Size:32K hitachi
2sb859.pdf 
2SB859 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1135 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Collector current IC 4
..2. Size:188K jmnic
2sb859.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB859 DESCRIPTION With TO-220C package Complement to type 2SD1135 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitt
..3. Size:217K inchange semiconductor
2sb859.pdf 
isc Silicon PNP Power Transistor 2SB859 DESCRIPTION Collector Current I = -4A C Low Collector Saturation Voltage V = -2.0V(Max)@I = -2A CE(sat) C High Collector Power Dissipation Complement to Type 2SD1135 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M
9.1. Size:67K rohm
2sb852k.pdf 
2SB852K Transistors High-gain Amplifier Transistor (-32V, -0.3A) 2SB852K External dimensions (Unit mm) Features 1) Darlington connection for high DC current gain. 2SB852K 2) Built-in 4k resistor between base and emitter. 2.9 1.1 3) Complements the 2SD1383K. 0.4 0.8 (3) Packaging specifications Type 2SB852K (2) (1) Package SMT3 0.95 0.95 0.15 hFE B 1.9 Mark
9.2. Size:52K rohm
2sb852k 2sa830s 2sd1383k 2sc1645s.pdf 
2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a
9.3. Size:114K rohm
2sb851 2sb1278.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.7. Size:228K utc
2sb857.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB857L-x-T60-K 2SB857G-x-T60-K TO-126 E C B Bulk 2SB857L-x-T6C-K 2SB857G-x-T6C-K TO-126C E C B Bulk 2SB857L-x-TA3-T 2SB857G-x-TA3-T TO-220 B C E Tu
9.8. Size:42K hitachi
2sb857 2sb858.pdf 
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
9.9. Size:32K hitachi
2sb857 2sb858.pdf 
2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base
9.11. Size:234K jmnic
2sb857 2sb858.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag
9.12. Size:44K cn haohai electr
hsb857 2sb857.pdf 
Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................
9.13. Size:171K inchange semiconductor
2sb857 2sb858.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll
9.14. Size:217K inchange semiconductor
2sb856.pdf 
isc Silicon PNP Power Transistor 2SB856 DESCRIPTION Collector Current I = -3A C Low Collector Saturation Voltage V = -1.2V(Max)@I = -2A CE(sat) C High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
9.15. Size:217K inchange semiconductor
2sb858.pdf 
isc Silicon PNP Power Transistor 2SB858 DESCRIPTION Collector Current I = -4A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C High Collector Power Dissipation Complement to Type 2SD1134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M
9.16. Size:212K inchange semiconductor
2sb850.pdf 
isc Silicon PNP Power Transistor 2SB850 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.2V(Max) @I = -5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1117 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier,
9.17. Size:216K inchange semiconductor
2sb855.pdf 
isc Silicon PNP Power Transistor 2SB855 DESCRIPTION Collector Current I = -2A C Low Collector Saturation Voltage V = -1.2V(Max)@I = -2A CE(sat) C High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
9.18. Size:217K inchange semiconductor
2sb857.pdf 
isc Silicon PNP Power Transistor 2SB857 DESCRIPTION Collector Current I = -4A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C High Collector Power Dissipation Complement to Type 2SD1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M
Другие транзисторы: 2SB857, 2SB857B, 2SB857C, 2SB857D, 2SB858, 2SB858B, 2SB858C, 2SB858D, TIP35C, 2SB859B, 2SB859C, 2SB86, 2SB860, 2SB861, 2SB861B, 2SB861C, 2SB862
