Биполярный транзистор 2SB877 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB877
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 110 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора: TO126
2SB877 Datasheet (PDF)
2sb873 e.pdf
Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector
2sb873.pdf
Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector
2sb870.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION With TO-220C package Complement to type 2SD866 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol
2sb871.pdf
isc Silicon PNP Power Transistor 2SB871DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -20V(Min)(BR)CEOHigh Speed SwitchingLow Collector Saturation Voltage: V = -0.6V(Max)@I = -10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T
2sb870.pdf
isc Silicon PNP Power Transistor 2SB870DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25
2sb874.pdf
isc Silicon PNP Power Transistor 2SB874DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage: V = -1.0V(Max)@I = -1.5ACE(sat) CComplement to Type 2SD1177Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: KT6109V
