Биполярный транзистор 2SB88 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB88
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 60 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 90 °C
Граничная частота коэффициента передачи тока (ft): 0.1 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
2SB88 Datasheet (PDF)
2sb888.pdf
Ordering number:915CPNP Epitaxial Planar Silicon Darlington Transistor2SB888Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvotlage regulator control.2003A[2SB888]Features High DC current gain (5000 or greater). Large current capacity and wide ASO. Low saturation voltage : VCE(sat)=0.8V typ.
2sb887.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB887 DESCRIPTION With TO-3PN package High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Motor drivers, printer Hammer drivers Relay drivers, Voltage regulator control PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mount
2sb886.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB886 DESCRIPTION With TO-220C package Complement to type 2SD1196 DARLINGTON High DC current gain High current capacity and wide ASO Low saturation voltage APPLICATIONS Motor drivers, printer Hammer drivers Relay drivers, Voltage regulator control. PINNING PIN DESCRIPTION1 Base Col
2sb885.pdf
JMnic Product Specification Silicon PNP Power Transistor 2SB885 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Low collector saturation voltage Complement to type 2SD1195 APPLICATIONS For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2
2sb882.pdf
isc Silicon PNP Darlington Power Transistor 2SB882DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -5AFE CWide Area of Safe OperationLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -5ACE(sat) CComplement to Type 2SD1192Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers,
2sb887.pdf
isc Silicon PNP Darlington Power Transistor 2SB887DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ I = -5AFE CWide Area of Safe OperationLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -5ACE(sat) CComplement to Type 2SD1197Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers,
2sb886.pdf
isc Silicon PNP Darlington Power Transistor 2SB886DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ I = -4AFE CWide Area of Safe OperationLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1196Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers,
2sb885.pdf
isc Silicon PNP Darlington Power Transistor 2SB885DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ I = -2.5AFE CWide Area of Safe OperationLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -2.5ACE(sat) CComplement to Type 2SD1195Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drive
2sb881.pdf
isc Silicon PNP Darlington Power Transistor 2SB881DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3.5AFE CWide Area of Safe OperationLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3.5ACE(sat) CComplement to Type 2SD1191Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drive
2sb884.pdf
isc Silicon PNP Darlington Power Transistor 2SB884DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ I = -1.5AFE CWide Area of Safe OperationLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -1.5ACE(sat) CComplement to Type 2SD1194Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drive
2sb883.pdf
isc Silicon PNP Darlington Power Transistor 2SB883DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -7AFE CWide Area of Safe OperationLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -7ACE(sat) CComplement to Type 2SD1193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers,
2sb880.pdf
isc Silicon PNP Darlington Power Transistor 2SB880DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -2AFE CWide Area of Safe OperationLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -2ACE(sat) CComplement to Type 2SD1190Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers,
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050