2SB887 datasheet, аналоги, основные параметры
Наименование производителя: 2SB887
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 110 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 90 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 180 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hFE): 1500
Корпус транзистора: TO3PN
Аналоги (замена) для 2SB887
- подборⓘ биполярного транзистора по параметрам
2SB887 даташит
..1. Size:183K jmnic
2sb887.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB887 DESCRIPTION With TO-3PN package High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Motor drivers, printer Hammer drivers Relay drivers, Voltage regulator control PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mount
..2. Size:218K inchange semiconductor
2sb887.pdf 
isc Silicon PNP Darlington Power Transistor 2SB887 DESCRIPTION High DC Current Gain- h = 1500(Min)@ I = -5A FE C Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -5A CE(sat) C Complement to Type 2SD1197 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers,
9.2. Size:72K sanyo
2sb888.pdf 
Ordering number 915C PNP Epitaxial Planar Silicon Darlington Transistor 2SB888 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm votlage regulator control. 2003A [2SB888] Features High DC current gain (5000 or greater). Large current capacity and wide ASO. Low saturation voltage VCE(sat)= 0.8V typ.
9.3. Size:152K jmnic
2sb886.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB886 DESCRIPTION With TO-220C package Complement to type 2SD1196 DARLINGTON High DC current gain High current capacity and wide ASO Low saturation voltage APPLICATIONS Motor drivers, printer Hammer drivers Relay drivers, Voltage regulator control. PINNING PIN DESCRIPTION 1 Base Col
9.4. Size:151K jmnic
2sb885.pdf 
JMnic Product Specification Silicon PNP Power Transistor 2SB885 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Low collector saturation voltage Complement to type 2SD1195 APPLICATIONS For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2
9.5. Size:214K inchange semiconductor
2sb882.pdf 
isc Silicon PNP Darlington Power Transistor 2SB882 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -5A FE C Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -5A CE(sat) C Complement to Type 2SD1192 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers,
9.6. Size:214K inchange semiconductor
2sb886.pdf 
isc Silicon PNP Darlington Power Transistor 2SB886 DESCRIPTION High DC Current Gain- h = 1500(Min)@ I = -4A FE C Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1196 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers,
9.7. Size:214K inchange semiconductor
2sb885.pdf 
isc Silicon PNP Darlington Power Transistor 2SB885 DESCRIPTION High DC Current Gain- h = 1500(Min)@ I = -2.5A FE C Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -2.5A CE(sat) C Complement to Type 2SD1195 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drive
9.8. Size:215K inchange semiconductor
2sb881.pdf 
isc Silicon PNP Darlington Power Transistor 2SB881 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -3.5A FE C Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -3.5A CE(sat) C Complement to Type 2SD1191 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drive
9.9. Size:214K inchange semiconductor
2sb884.pdf 
isc Silicon PNP Darlington Power Transistor 2SB884 DESCRIPTION High DC Current Gain- h = 1500(Min)@ I = -1.5A FE C Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -1.5A CE(sat) C Complement to Type 2SD1194 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drive
9.10. Size:218K inchange semiconductor
2sb883.pdf 
isc Silicon PNP Darlington Power Transistor 2SB883 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -7A FE C Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -7A CE(sat) C Complement to Type 2SD1193 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers,
9.11. Size:214K inchange semiconductor
2sb880.pdf 
isc Silicon PNP Darlington Power Transistor 2SB880 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -2A FE C Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -2A CE(sat) C Complement to Type 2SD1190 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers,
Другие транзисторы: 2SB88, 2SB880, 2SB881, 2SB882, 2SB883, 2SB884, 2SB885, 2SB886, 2SC828, 2SB888, 2SB889, 2SB89, 2SB890, 2SB891, 2SB892, 2SB892R, 2SB892S
