Справочник транзисторов. 2SB89

 

Биполярный транзистор 2SB89 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB89
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
   Макcимальный постоянный ток коллектора (Ic): 0.15 A
   Предельная температура PN-перехода (Tj): 85 °C
   Граничная частота коэффициента передачи тока (ft): 0.4 MHz
   Статический коэффициент передачи тока (hfe): 55
   Корпус транзистора: TO7

 Аналоги (замена) для 2SB89

 

 

2SB89 Datasheet (PDF)

 0.1. Size:86K  1
2sb895 2sb895a.pdf

2SB89
2SB89

 0.2. Size:81K  1
2sb894.pdf

2SB89
2SB89

 0.3. Size:77K  sanyo
2sb893.pdf

2SB89
2SB89

Ordering number:1023CPNP Epitaxial Planar Silicon Transistor2SB893Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, strobes. unit:mm2003AFeatures [2SB893] Low saturation voltage : VCE(sat)0.45V (IC=1.5A, IB=0.15A). Large current capacity and wide ASO : IC max=2.5A.JEDEC : TO-92 B : Base

 0.4. Size:8537K  jiangsu
2sb892.pdf

2SB89
2SB89

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L 2SB892 TRANSISTOR (PNP) 1. EMITTER FEATURE Power Supplies, Relay Drivers, Lamp Drivers, 2. COLLECTOR and Automotive Wiring 3. BASE Low Saturation Voltage. Large Current Capacity and Wide ASO. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parame

 0.5. Size:223K  lge
2sb892.pdf

2SB89
2SB89

2SB892 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.7005.1001Features7.8008.200 Power supplies, relay drivers, lamp drivers, 0.6000.800and automotive wiring 0.350Low saturation voltage. 0.55013.80014.200 Large current capacity and wide ASO. Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwis

 0.6. Size:227K  lge
2sb892 to-92mod.pdf

2SB89
2SB89

2SB892 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features Power supplies, relay drivers, lamp drivers, 8.4008.800and automotive wiring 0.9001.100 Low saturation voltage. 0.400 Large current capacity and wide ASO. 0.60013.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)MAXIMUM RATINGS* TA=

 0.7. Size:277K  lzg
2sb892 3ca892.pdf

2SB89
2SB89

2SB892(3CA892) PNP /SILICON PNP TRANSISTOR :,,/Purpose:Power supplies,relay drivers, lamp drivers,and automotive wiring. :,/Features:Low saturation voltage,large current capacity. /Absolute maximum ratings(Ta=25) Symbol Rating Unit VC

 0.8. Size:188K  inchange semiconductor
2sb896.pdf

2SB89
2SB89

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB896DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -40V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -0.6(Max.) @I = -7ACE(sat) CHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage s

 0.9. Size:93K  inchange semiconductor
2sb896-a.pdf

2SB89
2SB89

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A DESCRIPTION With TO-220C package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAME

 0.10. Size:99K  inchange semiconductor
2sb891f.pdf

2SB89
2SB89

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F DESCRIPTION With TO-126 package Complement to type 2SD1189F Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL

 0.11. Size:184K  inchange semiconductor
2sb899.pdf

2SB89
2SB89

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB899DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -50V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.2(Max.) @I = -3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and

 0.12. Size:184K  inchange semiconductor
2sb898.pdf

2SB89
2SB89

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB898DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -50V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.2(Max.) @I = -3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and

 0.13. Size:216K  inchange semiconductor
2sb897.pdf

2SB89
2SB89

isc Silicon PNP Darlington Power Transistor 2SB897DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -10AFE CLow Collector Saturation Voltage-: V = -1.5V(Max.) @I = 10ACE(sat) CComplement to Type 2SD1210Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high

 0.14. Size:213K  inchange semiconductor
2sb891.pdf

2SB89
2SB89

isc Silicon PNP Power Transistor 2SB891DESCRIPTIONHigh Collector Current -I = -2ACGood Linearity of hFELow Collector Saturation VoltageComplement to Type 2SD1189Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stage of audio amplifier,voltage regulator,DC-DC converter and relay driver.AB

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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