2SB898 datasheet и подбор замены

 ..1. Size:184K  inchange semiconductor
 2sb898.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB898 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -50V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.2(Max.) @I = -3A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and

 9.1. Size:86K  1
 2sb895 2sb895a.pdf 

 9.2. Size:81K  1
 2sb894.pdf 

 9.3. Size:77K  sanyo
 2sb893.pdf 

Ordering number 1023C PNP Epitaxial Planar Silicon Transistor 2SB893 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, strobes. unit mm 2003A Features [2SB893] Low saturation voltage VCE(sat) 0.45V (IC= 1.5A, IB= 0.15A). Large current capacity and wide ASO IC max= 2.5A. JEDEC TO-92 B Base

 9.4. Size:8537K  jiangsu
 2sb892.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L 2SB892 TRANSISTOR (PNP) 1. EMITTER FEATURE Power Supplies, Relay Drivers, Lamp Drivers, 2. COLLECTOR and Automotive Wiring 3. BASE Low Saturation Voltage. Large Current Capacity and Wide ASO. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parame

 9.5. Size:223K  lge
 2sb892.pdf 

2SB892 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 5.100 1 Features 7.800 8.200 Power supplies, relay drivers, lamp drivers, 0.600 0.800 and automotive wiring 0.350 Low saturation voltage. 0.550 13.800 14.200 Large current capacity and wide ASO. Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwis

 9.6. Size:227K  lge
 2sb892 to-92mod.pdf 

2SB892 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 6.200 Features Power supplies, relay drivers, lamp drivers, 8.400 8.800 and automotive wiring 0.900 1.100 Low saturation voltage. 0.400 Large current capacity and wide ASO. 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) MAXIMUM RATINGS* TA=

 9.7. Size:277K  lzg
 2sb892 3ca892.pdf 

2SB892(3CA892) PNP /SILICON PNP TRANSISTOR , , /Purpose Power supplies,relay drivers, lamp drivers,and automotive wiring. , /Features Low saturation voltage,large current capacity. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V C

 9.8. Size:188K  inchange semiconductor
 2sb896.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB896 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -40V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -0.6(Max.) @I = -7A CE(sat) C High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage s

 9.9. Size:93K  inchange semiconductor
 2sb896-a.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A DESCRIPTION With TO-220C package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAME

 9.10. Size:99K  inchange semiconductor
 2sb891f.pdf 

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F DESCRIPTION With TO-126 package Complement to type 2SD1189F Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL

 9.11. Size:184K  inchange semiconductor
 2sb899.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB899 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -50V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.2(Max.) @I = -3A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and

 9.12. Size:216K  inchange semiconductor
 2sb897.pdf 

isc Silicon PNP Darlington Power Transistor 2SB897 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -10A FE C Low Collector Saturation Voltage- V = -1.5V(Max.) @I = 10A CE(sat) C Complement to Type 2SD1210 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high

 9.13. Size:213K  inchange semiconductor
 2sb891.pdf 

isc Silicon PNP Power Transistor 2SB891 DESCRIPTION High Collector Current -I = -2A C Good Linearity of h FE Low Collector Saturation Voltage Complement to Type 2SD1189 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stage of audio amplifier, voltage regulator,DC-DC converter and relay driver. AB