Биполярный транзистор 2SB901 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB901
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO220
2SB901 Datasheet (PDF)
2sb901.pdf
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB901DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for powe
2sb909m 2sb1237.pdf
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2sb908.pdf
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2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB908 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage: V = -1.5 V (max) (I = -3 A) CE (sat) C Complementary to 2SD1223. Maximum Ratings (Ta = 25
2sb907.pdf
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2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB907 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage: V = -1.5 V (max) (I = -2 A) CE (sat) C Complementary to 2SD1222. Maximum Ratings (Ta = 25
2sb905.pdf
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2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB905 Power Amplifier Applications Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VCollector-emitter voltage VCEO -150 VEmitter-base voltage VEBO -6 VCollector current IC -1.5 ABase current IB -1.0 ATa = 25C 1.0
2sb906.pdf
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2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) 2SB906 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : V = -1.0 V (typ.) (I = -3 A, I = -0.3 A) CE (sat) C B High power dissipation: P = 20 W (Tc = 25C) C Complementary to 2SD1221 (B) 2SB906 (LB) M
2sb903.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SB903 DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity. Complement to type 2SD1212 APPLICATIONS Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. High-speed switching applications PINNING PIN DES
2sb906.pdf
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SMD Type TransistorsPNP Transistors2SB906TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector saturation voltage High power dissipation: PC = 20 W (Tc = 25C) 0.1270.80+0.1 max-0.1 Complementary to 2SD12212.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta
2sb903.pdf
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isc Silicon PNP Power Transistor 2SB903DESCRIPTIONHigh Collector Current: I = -12ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD1212Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current swi
2sb904.pdf
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB904DESCRIPTIONHigh Collector Current:I = -20ACLow Collector Saturation Voltage: V =- 0.5V(Max)@I = 8ACE(sat) CComplement to Type 2SD1213Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers,high-speed inverters
2sb900.pdf
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB900DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -50V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for powe
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .