2SB903S - описание и поиск аналогов

JMnic Product Specification Silicon PNP Power Transistors 2SB903 DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity. Complement to type 2SD1212 APPLICATIONS Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. High-speed switching applications PINNING PIN DES

isc Silicon PNP Power Transistor 2SB903 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Complement to Type 2SD1212 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current swi

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2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB908 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage V = -1.5 V (max) (I = -3 A) CE (sat) C Complementary to 2SD1223. Maximum Ratings (Ta = 25

2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB907 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage V = -1.5 V (max) (I = -2 A) CE (sat) C Complementary to 2SD1222. Maximum Ratings (Ta = 25

2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB905 Power Amplifier Applications Unit mm Complementary to SD1220 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -6 V Collector current IC -1.5 A Base current IB -1.0 A Ta = 25 C 1.0

2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) 2SB906 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage V = -1.0 V (typ.) (I = -3 A, I = -0.3 A) CE (sat) C B High power dissipation P = 20 W (Tc = 25 C) C Complementary to 2SD1221 (B) 2SB906 (LB) M

SMD Type Transistors PNP Transistors 2SB906 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector saturation voltage High power dissipation PC = 20 W (Tc = 25 C) 0.127 0.80+0.1 max -0.1 Complementary to 2SD1221 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB901 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -2A CE(sat) C Wide area of safe operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for powe

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB904 DESCRIPTION High Collector Current I = -20A C Low Collector Saturation Voltage V =- 0.5V(Max)@I = 8A CE(sat) C Complement to Type 2SD1213 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high-speed inverters

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB900 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -50V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -2A CE(sat) C Wide area of safe operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for powe