2SB920L datasheet, аналоги, основные параметры
Наименование производителя: 2SB920L
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hFE): 70
Корпус транзистора: TO220
Аналоги (замена) для 2SB920L
- подборⓘ биполярного транзистора по параметрам
2SB920L даташит
9.3. Size:26K sanyo
2sb922.pdf 
Ordering number ENN1429A 2SB922 / 2SD1238 PNP / NPN Epitaxial Planar Silicon Transistors 2SB922 / 2SD1238 Large Current Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2022A [2SB922 / 2SD1238] Features 15.6 3.2 4.8 14.0 2.0 Low collector-to-emitter saturation voltage VCE(s
9.4. Size:49K panasonic
2sb928.pdf 
Power Transistors 2SB928, 2SB928A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A 1.5max. 1.1max. Features High collector to emitter VCEO 0.8 0.1 0.5max. High collector power dissipation PC 2.54 0.3 N type package enabling direct soldering of the
9.5. Size:50K panasonic
2sb929.pdf 
Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 For power amplification Complementary to 2SD1252 and 2SD1252A Features 1.5max. 1.1max. High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.8 0.1 0.5max. N type package enabling direct solder
9.6. Size:1109K kexin
2sb928a.pdf 
SMD Type Transistors PNP Transistors 2SB928A TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High collector-emitter voltage (Base open) VCEO High collector power dissipation PC Complementary to 2SD1250A 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum
9.7. Size:1144K kexin
2sb929a.pdf 
SMD Type Transistors PNP Transistors 2SB929A TO-252 Unit mm Features +0.15 High forward current transfer ratio hFE 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1252A 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2
9.8. Size:1112K kexin
2sb928.pdf 
SMD Type Transistors PNP Transistors 2SB928 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High collector-emitter voltage (Base open) VCEO High collector power dissipation PC Complementary to 2SD1250 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum R
9.9. Size:1145K kexin
2sb929.pdf 
SMD Type Transistors PNP Transistors 2SB929 TO-252 Unit mm Features +0.15 High forward current transfer ratio hFE 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1252 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 C
9.10. Size:212K inchange semiconductor
2sb924.pdf 
isc Silicon PNP Power Transistor 2SB924 DESCRIPTION Wide Safety Operation Area Low Collector Saturation Voltage V = -0.5V(Max)@I = -12A CE(sat) C Complement to Type 2SD1240 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high- speed inverters, converters applications. A
9.11. Size:221K inchange semiconductor
2sb922.pdf 
isc Silicon PNP Power Transistor 2SB922 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -6A CE(sat) C Complement to Type 2SD1238 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high- speed inverters, converters applica
9.12. Size:217K inchange semiconductor
2sb925.pdf 
isc Silicon PNP Power Transistor 2SB925 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.6V(Max)@I = -5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
9.13. Size:213K inchange semiconductor
2sb923.pdf 
isc Silicon PNP Power Transistor 2SB923 DESCRIPTION High Collector Current I = -20A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -10A CE(sat) C Complement to Type 2SD1239 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high- speed inverters, converters applic
9.14. Size:217K inchange semiconductor
2sb921.pdf 
isc Silicon PNP Power Transistor 2SB921 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -4A CE(sat) C Complement to Type 2SD1237 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
Другие транзисторы: 2SB917, 2SB918, 2SB919, 2SB919Q, 2SB919R, 2SB919S, 2SB92, 2SB920, TIP31, 2SB920LQ, 2SB920LR, 2SB920LS, 2SB921, 2SB921L, 2SB921LQ, 2SB921LR, 2SB921LS
