Биполярный транзистор 2SB922L
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB922L
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 80
W
Макcимально допустимое напряжение коллектор-база (Ucb): 90
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V
Макcимальный постоянный ток коллектора (Ic): 12
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 10
MHz
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора:
TO218
Аналоги (замена) для 2SB922L
2SB922L
Datasheet (PDF)
8.1. Size:26K sanyo
2sb922.pdf 
Ordering number : ENN1429A2SB922 / 2SD1238PNP / NPN Epitaxial Planar Silicon Transistors2SB922 / 2SD1238Large Current Switching ApplicationsApplicationsPackage Dimensions Large current switching of relay drivers, high-speedunit : mminverters, converters.2022A[2SB922 / 2SD1238]Features15.63.24.814.02.0 Low collector-to-emitter saturation voltage :VCE(s
8.2. Size:221K inchange semiconductor
2sb922.pdf 
isc Silicon PNP Power Transistor 2SB922DESCRIPTIONHigh Collector Current:: I = -12ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -6ACE(sat) CComplement to Type 2SD1238Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers, high-speed inverters, converters applica
9.3. Size:49K panasonic
2sb928.pdf 
Power Transistors2SB928, 2SB928ASilicon PNP epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1For TV vartical deflection outputComplementary to 2SD1250 and 2SD1250A1.5max. 1.1max.FeaturesHigh collector to emitter VCEO0.8 0.1 0.5max.High collector power dissipation PC2.54 0.3N type package enabling direct soldering of the
9.4. Size:50K panasonic
2sb929.pdf 
Power Transistors2SB929, 2SB929ASilicon PNP epitaxial planar type Unit: mm8.5 0.2 3.4 0.36.0 0.5 1.0 0.1For power amplificationComplementary to 2SD1252 and 2SD1252AFeatures1.5max. 1.1max.High forward current transfer ratio hFE which has satisfactory linearityLow collector to emitter saturation voltage VCE(sat)0.8 0.1 0.5max.N type package enabling direct solder
9.5. Size:1109K kexin
2sb928a.pdf 
SMD Type TransistorsPNP Transistors2SB928ATO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High collector-emitter voltage (Base open) VCEO High collector power dissipation PC Complementary to 2SD1250A0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum
9.6. Size:1144K kexin
2sb929a.pdf 
SMD Type TransistorsPNP Transistors2SB929ATO-252Unit: mm Features+0.15 High forward current transfer ratio hFE6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1252A0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152
9.7. Size:1112K kexin
2sb928.pdf 
SMD Type TransistorsPNP Transistors2SB928TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High collector-emitter voltage (Base open) VCEO High collector power dissipation PC Complementary to 2SD12500.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum R
9.8. Size:1145K kexin
2sb929.pdf 
SMD Type TransistorsPNP Transistors2SB929TO-252Unit: mm Features+0.15 High forward current transfer ratio hFE6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD12520.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 C
9.9. Size:212K inchange semiconductor
2sb924.pdf 
isc Silicon PNP Power Transistor 2SB924DESCRIPTIONWide Safety Operation AreaLow Collector Saturation Voltage: V = -0.5V(Max)@I = -12ACE(sat) CComplement to Type 2SD1240Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers, high-speed inverters, converters applications.A
9.10. Size:218K inchange semiconductor
2sb920.pdf 
isc Silicon PNP Power Transistor 2SB920DESCRIPTIONHigh Collector Current:I = -5ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1236Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose large current switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25
9.11. Size:217K inchange semiconductor
2sb925.pdf 
isc Silicon PNP Power Transistor 2SB925DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.6V(Max)@I = -5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
9.12. Size:213K inchange semiconductor
2sb923.pdf 
isc Silicon PNP Power Transistor 2SB923DESCRIPTIONHigh Collector Current:: I = -20ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -10ACE(sat) CComplement to Type 2SD1239Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers, high-speed inverters, converters applic
9.13. Size:217K inchange semiconductor
2sb921.pdf 
isc Silicon PNP Power Transistor 2SB921DESCRIPTIONHigh Collector Current: I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -4ACE(sat) CComplement to Type 2SD1237Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
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