Справочник транзисторов. 2SB973

 

Биполярный транзистор 2SB973 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB973
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 10 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
   Макcимальный постоянный ток коллектора (Ic): 0.7 A
   Предельная температура PN-перехода (Tj): 165 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: TO236

 Аналоги (замена) для 2SB973

 

 

2SB973 Datasheet (PDF)

 9.1. Size:73K  panasonic
2sb970.pdf

2SB973 2SB973

 9.2. Size:39K  panasonic
2sb976 e.pdf

2SB973 2SB973

Transistor2SB976Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 27

 9.3. Size:41K  panasonic
2sb970 e.pdf

2SB973 2SB973

Transistor2SB970Silicon PNP epitaxial planer typeFor low-voltage output amplificationUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15Low collector to emitter saturation voltage VCE(sat).Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings

 9.4. Size:35K  panasonic
2sb976.pdf

2SB973 2SB973

Transistor2SB976Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 27

 9.5. Size:82K  panasonic
2sb977.pdf

2SB973 2SB973

 9.6. Size:885K  kexin
2sb970.pdf

2SB973 2SB973

SMD Type TransistorsPNP Transistors2SB970SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 Low collector to emitter saturation voltage VCE(sat). For low-voltage output amplification1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

 9.7. Size:190K  inchange semiconductor
2sb975.pdf

2SB973 2SB973

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2SB975DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3AFE CLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD1309Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power

 9.8. Size:220K  inchange semiconductor
2sb979.pdf

2SB973 2SB973

isc Silicon PNP Power Transistor 2SB979DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

 9.9. Size:189K  inchange semiconductor
2sb974.pdf

2SB973 2SB973

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2SB974DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -2AFE CLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -2ACE(sat) CComplement to Type 2SD1308Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power

 9.10. Size:85K  inchange semiconductor
2sb975-220.pdf

2SB973 2SB973

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB975 DESCRIPTION With TO-220 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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