Биполярный транзистор 2SB992 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB992
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 5 MHz
Статический коэффициент передачи тока (hfe): 140
Корпус транзистора: TO126
2SB992 Datasheet (PDF)
2sb992.pdf
isc Silicon PNP Power Transistor 2SB992DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.5V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1362Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre
2sb996.pdf
isc Silicon PNP Power Transistor 2SB996DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 20~25W high-fidelity audio frequencyamplifier output stage.ABSOL
2sb993.pdf
isc Silicon PNP Power Transistor 2SB993DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.4V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1363Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre
2sb991.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB991DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -180V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -0.5ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequen
2sb994.pdf
isc Silicon PNP Power Transistor 2SB994DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ I = -3ACE(sat) CComplement to Type 2SD1354Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f
2sb995.pdf
isc Silicon PNP Power Transistor 2SB995DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -2.0V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1355Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 30W high-fidelity a
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N2257
History: 2N2257
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050