2SC1016 datasheet, аналоги, основные параметры
Наименование производителя: 2SC1016
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 400 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO128
Аналоги (замена) для 2SC1016
- подборⓘ биполярного транзистора по параметрам
2SC1016 даташит
2sc1047 e.pdf
Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20
2sc1047.pdf
Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20
2sc1008.pdf
2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G H Emitter Base Collector J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G B A
2sc1050.pdf
Silicon Epitaxial Planar Transistor 2SC1050 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 300 V Collector-emitter voltage (open base) VCEO - 250 V Collector current
2sc1008.pdf
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR NPN TO 92 FEATURES 1.EMITTER Power dissipation PCM 0.8 W Tamb=25 2. BASE Collector current 3. COLLECTOR ICM 0.7 A Collector-base voltage 1 2 3 V(BR)CBO
2sc1008.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1008 TRANSISTOR (NPN) 1. EMITTER 2. BASE FEATURES 3. COLLECTOR General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-
2sc1050.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1050 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in audio and general purpose applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL
2sc1030.pdf
Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC
2sc1080.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMET
2sc1061.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1061 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rat
2sc1096.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1096 DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Em
2sc1051.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1051 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL
2sc1027.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute
2sc1098.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION With TO-202 package High Voltage High transition frequency APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stages of 5 17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-20
2sc1079.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL
2sc1008.pdf
WEITRON 2SC1008 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 80 A Collector Current ICM 0.7 Power Dissipation PCM 0.8 W -55 to +150 Junction Temperature TJ C -55 to +150 Tstg Storage Temperature C ELECTRICAL CHARACTE
2sc1009.pdf
SMD Type Transistors NPN Transistors 2SC1009 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto
2sc1046.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1046 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
2sc1008.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1008 DESCRIPTION NPN high-voltage transistor Low current (max. 700 mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification in high voltage applications , such as telephony applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
2sc1079 2sc1080.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=
2sc1050.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1050 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Silicon NPN high frequency,high power transistors in a plastic envelope,primarily for use in audio and general purpose ABSOLUTE MAXIMUM RATI
2sc1080.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1080 DESCRIPTION With TO-3 Package High power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 110 V CBO
2sc1061.pdf
isc Silicon NPN Power Transistor 2SC1061 DESCRIPTION Low Collector Saturation Voltage- V = 1.0(V)(Max)@ I = 2A CE(sat) C DC Current Gain- h = 35-320 @ I = 0.5A FE C Complement to Type 2SA671 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RA
2sc1004.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1004 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
2sc1060.pdf
isc Silicon NPN Power Transistor 2SC1060 DESCRIPTION With TO-220 package Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers A
2sc1098 2sc1098a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION With TO-202 package High Voltage High transition frequency APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stages of 5 17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outl
2sc1096.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1096 DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN DESCRIPTION 1 Base
2sc1034.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1034 DESCRIPTION DC Current Gain -h = 4(Min)@ I = 0.75A FE C Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM
2sc1051.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1051 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low frequency power amplifier and large power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sc1024.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1024 DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM R
2sc1027.pdf
isc Silicon NPN Power Transistor 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltag Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-
2sc1079.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1079 DESCRIPTION With TO-3 Package High power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO
Другие транзисторы: 2SC101, 2SC1010, 2SC1011, 2SC1012, 2SC1012A, 2SC1013, 2SC1014, 2SC1015, BC337, 2SC1017, 2SC1018, 2SC1019, 2SC101A, 2SC102, 2SC1020, 2SC1021, 2SC1022
History: HEPS3010 | DTA124XET1G | HEPS3012
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