INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1046DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSfor use in horizontal deflection output stages forcolor TV receivesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

Transistor2SC1047Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V 1.27 1.27Collector to emitter voltage VCEO 20

Transistor2SC1047Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V 1.27 1.27Collector to emitter voltage VCEO 20

2SC1008-RMCC2SC1008-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1008-YCA 91311Phone: (818) 701-49332SC1008-GFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingEpitaxial Transistor

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2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G HEmitterBase CollectorJCLASSIFICATION OF hFE A DMillimeterREF. Min. Max.Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-GBA

Silicon Epitaxial Planar Transistor2SC1050GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 300 VCollector-emitter voltage (open base)VCEO - 250 VCollector current

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTORNPN TO92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 WTamb=25 2. BASE Collector current 3. COLLECTOR ICM : 0.7 A Collector-base voltage 1 2 3 V(BR)CBO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1008 TRANSISTOR (NPN) 1. EMITTER 2. BASE FEATURES 3. COLLECTOR General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1050 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in audio and general purpose applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC

JMnic Product SpecificationSilicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1061 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rat

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1096 DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING PIN DESCRIPTION1 Base 2 Collector3 Em

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1051 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION With TO-202 package High Voltage High transition frequency APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-20

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL

WEITRON2SC1008NPN Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASETO-92MAXIMUM RATINGS (T unless otherwise noted)A=25CParameter Symbol Value UnitsCollector-Base Voltage VVCBO 80ACollector Current ICM 0.7Power Dissipation PCM 0.8 W-55 to +150Junction Temperature TJ C-55 to +150TstgStorage Temperature CELECTRICAL CHARACTE

SMD Type TransistorsNPN Transistors2SC1009SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=30V 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1008DESCRIPTIONNPN high-voltage transistorLow current (max. 700 mA)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationin high voltage applications , such as telephonyapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1050DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSilicon NPN high frequency,high power transistors in aplastic envelope,primarily for use in audio and generalpurposeABSOLUTE MAXIMUM RATI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1080DESCRIPTIONWith TO-3 PackageHigh power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 110 VCBO

isc Silicon NPN Power Transistor 2SC1061DESCRIPTIONLow Collector Saturation Voltage-:V = 1.0(V)(Max)@ I = 2ACE(sat) CDC Current Gain-: h = 35-320 @ I = 0.5AFE CComplement to Type 2SA671Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1004DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSfor use in horizontal deflection output stages forcolor TV receivesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

isc Silicon NPN Power Transistor 2SC1060DESCRIPTIONWith TO-220 packageCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorGeneral purpose power amplifiersA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION With TO-202 package High Voltage High transition frequency APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outl

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1096 DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN DESCRIPTION1 Base

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1034DESCRIPTIONDC Current Gain -h = 4(Min)@ I = 0.75AFE CCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1051DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low frequency power amplifier and large powerswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1024DESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC1027DESCRIPTIONWith TO-3 packageHigh power dissipationLow collector saturation voltagMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1079DESCRIPTIONWith TO-3 PackageHigh power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBO