Биполярный транзистор 2SC1172
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC1172
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 5
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 2
MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора:
TO3
Аналоги (замена) для 2SC1172
2SC1172
Datasheet (PDF)
..1. Size:69K wingshing
2sc1172.pdf NPN TRIPLE DIFFUSED2SC1172 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector
..2. Size:143K jmnic
2sc1172.pdf JMnic Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For use in color TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAME
..3. Size:176K inchange semiconductor
2sc1172.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1172DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.1. Size:93K toshiba
2sc1173.pdf This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.3. Size:146K jmnic
2sc1170.pdf JMnic Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
8.4. Size:154K jmnic
2sc1173.pdf JMnic Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION With TO-220 package Complement to type 2SA473 Collector current :IC=3A Collector dissipation:PC=10W@TC=25 APPLICATIONS Low frequency power amplifier Power regulator PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (T
8.5. Size:176K inchange semiconductor
2sc1170.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1170DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.6. Size:129K inchange semiconductor
2sc1170a.pdf Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET
8.7. Size:192K inchange semiconductor
2sc1173.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1173DESCRIPTIONLow Collector Saturation VoltageComplement to Type 2SA473100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)
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