2SC124 datasheet, аналоги, основные параметры
Наименование производителя: 2SC124
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.025 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO39
Аналоги (замена) для 2SC124
- подборⓘ биполярного транзистора по параметрам
2SC124 даташит
9.3. Size:170K renesas
r07ds0431ej 2sc1213a-1.pdf 
Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code PRSS0003DA-A (Package name TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item S
9.4. Size:102K renesas
r07ds0432ej 2sc1213ak-1.pdf 
Preliminary Datasheet R07DS0432EJ0300 2SC1213A(K) (Previous REJ03G0685-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Medium speed switching Outline RENESAS Package code PRSS0003DA-A (Package name TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collec
9.5. Size:58K panasonic
2sc1215 e.pdf 
Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base
9.6. Size:62K panasonic
2sc1215.pdf 
Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base
9.8. Size:23K hitachi
2sc1213.pdf 
2SC1213, 2SC1213A Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage
9.9. Size:22K hitachi
2sc1214.pdf 
2SC1214 Silicon NPN Epitaxial ADE-208-1050 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1214 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collec
9.10. Size:29K hitachi
2sc1212.pdf 
2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power diss
9.11. Size:277K secos
2sc1213-2sc1213a.pdf 
2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D
9.12. Size:28K advanced-semi
2sc1252.pdf 
2SC1252 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2SC1252 is a High Frequency PACKAGE STYLE TO-39 Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz. FEATURES INCLUDE High Gain -17 dB Typ. @ 200 MHz Low NF - 3.0 dB Typ. @ 200 MHz Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 45 V VCE 25 V PDISS 5 W @ TC = 25 C
9.13. Size:40K advanced-semi
2sc1251.pdf 
2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. PACKAGE STYLE .204 4L STUD FEATURES INCLUDE Direct Replacement for NE74020 High Gain - 10 dB min. @ 1.0 GHz Gold Metalization MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65
9.14. Size:419K jiangsu
2sc1213a.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER Low Frequency Amplifier 2. COLLECTOR Complementary Pair with 2SA673A 3. BASE Equivalent Circuit
9.15. Size:179K jmnic
2sc1212.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC121
9.17. Size:180K inchange semiconductor
2sc1235.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1235 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in lined-operated color TV chroma output circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
9.18. Size:180K inchange semiconductor
2sc1226 2sc1226a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION With TO-202 package Complement to type 2SA699/699A APPLICATIONS For medium power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET
9.19. Size:146K inchange semiconductor
2sc1212 2sc1212a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS V
9.20. Size:177K inchange semiconductor
2sc1295.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1295 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col
9.21. Size:214K inchange semiconductor
2sc1212a.pdf 
isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION High Collector Current -I = 1A C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
9.22. Size:176K inchange semiconductor
2sc1227.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1227 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For clocked voltage converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta
9.23. Size:215K inchange semiconductor
2sc1212.pdf 
isc Silicon NPN Power Transistor 2SC1212 DESCRIPTION High Collector Current I = 1A C Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
Другие транзисторы: 2SC1231, 2SC1232, 2SC1233, 2SC1235, 2SC1236, 2SC1237, 2SC1238, 2SC1239, 13003, 2SC1240, 2SC1241, 2SC1241A, 2SC1242, 2SC1242A, 2SC1243, 2SC1244, 2SC1246
