Справочник транзисторов. 2SC1299

 

Биполярный транзистор 2SC1299 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC1299

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 200 W

Макcимально допустимое напряжение коллектор-база (Ucb): 300 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 30 A

Предельная температура PN-перехода (Tj): 180 °C

Граничная частота коэффициента передачи тока (ft): 12 MHz

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO3

Аналоги (замена) для 2SC1299

 

 

2SC1299 Datasheet (PDF)

4.1. 2sc1295.pdf Size:127K _inchange_semiconductor

2SC1299
2SC1299

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1295 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS

5.1. r07ds0432ej 2sc1213ak-1.pdf Size:102K _renesas

2SC1299
2SC1299

Preliminary Datasheet R07DS0432EJ0300 2SC1213A(K) (Previous: REJ03G0685-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to b

5.2. r07ds0431ej 2sc1213a-1.pdf Size:170K _renesas

2SC1299
2SC1299

Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2S

 5.3. 2sc1226.pdf Size:75K _panasonic

2SC1299

5.4. 2sc1215 e.pdf Size:58K _panasonic

2SC1299
2SC1299

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VE

 5.5. 2sc1215.pdf Size:62K _panasonic

2SC1299
2SC1299

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VE

5.6. 2sc1212.pdf Size:29K _hitachi

2SC1299
2SC1299

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power dissipat

5.7. 2sc1214.pdf Size:22K _hitachi

2SC1299
2SC1299

2SC1214 Silicon NPN Epitaxial ADE-208-1050 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1214 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector

5.8. 2sc1213.pdf Size:23K _hitachi

2SC1299
2SC1299

2SC1213, 2SC1213A Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage VEBO 44V

5.9. 2sc1213-2sc1213a.pdf Size:277K _secos

2SC1299
2SC1299

2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D Mil

5.10. 2sc1251.pdf Size:40K _advanced-semi

2SC1299
2SC1299

2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. PACKAGE STYLE .204 4L STUD FEATURES INCLUDE: Direct Replacement for NE74020 High Gain - 10 dB min. @ 1.0 GHz Gold Metalization MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +1

5.11. 2sc1252.pdf Size:28K _advanced-semi

2SC1299

2SC1252 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2SC1252 is a High Frequency PACKAGE STYLE TO-39 Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz. FEATURES INCLUDE: High Gain -17 dB Typ. @ 200 MHz Low NF - 3.0 dB Typ. @ 200 MHz Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 45 V VCE 25 V PDISS 5 W @ TC = 25 C TJ -65

5.12. 2sc1212.pdf Size:179K _jmnic

2SC1299
2SC1299

JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC1212 50

5.13. 2sc1222.pdf Size:106K _usha

2SC1299
2SC1299

Transistors 2SC1222

5.14. 2sc1227.pdf Size:129K _inchange_semiconductor

2SC1299
2SC1299

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1227 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

5.15. 2sc1212a.pdf Size:102K _inchange_semiconductor

2SC1299
2SC1299

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION ·High Collector Current -IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta

5.16. 2sc1212 2sc1212a.pdf Size:146K _inchange_semiconductor

2SC1299
2SC1299

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA743/743A APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER

5.17. 2sc1235.pdf Size:127K _inchange_semiconductor

2SC1299
2SC1299

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1235 DESCRIPTION ·With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum

5.18. 2sc1226 2sc1226a.pdf Size:180K _inchange_semiconductor

2SC1299
2SC1299

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION ·With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CO

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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