Биполярный транзистор 2SC1313Y - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC1313Y
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора: TO92
2SC1313Y Datasheet (PDF)
2sc1318a e.pdf
Transistor2SC1318ASilicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA720A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collec
2sc1317 e.pdf
Transistor2SC1317, 2SC1318Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SA719 and 2SA7205.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SA719 and 2SA720.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SC1317 30
2sc1317 2sc1318.pdf
Transistors2SC1317, 2SC1318Silicon NPN epitaxial planer typeUnit: mmFor low-frequency power amplification and driver amplification 5.00.2 4.00.2Complementary to 2SA719 and 2SA720 Features0.70.1 Low collector to emitter saturation voltage VCE(sat) Complementary pair with 2SA719 and 2SA720 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit 0.45+0.15
2sc1318a.pdf
2SC1318A 0.5 A, 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Collector output capacitance Cob=11 pF (TYP), 20 pF (MAX) G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SC1318A-Q 2SC1318A-R 2SC1318A-S MillimeterREF
2sc1318.pdf
2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) Millimeter Complementary Pair with 2SA720 REF.Min. Max.A 4.40 4.70B 4.30 4.70C 12.70 -D 3.30 3.81E 0.36 0.56F 0.36 0.51CLASSIFICAT
2sc1318.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 2SC1318 TRANSISTOR (NPN)1. EMITTERFEATURES Low Collector to Emitter Saturation Voltage VCE(sat)2. COLLECTOR Complementary Pair with 2SA7203. BASE Equivalent Circuit C1318=Device code C1318 Solid dot=Green molding compound device, XXX if none,the normal device
2sc1318a.pdf
2SC1318(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 70 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA Di
2sc1316.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1316DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in lined-operated color TV chroma outputcircuits and sound output circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050