2SC1424 - аналоги, параметры транзистора - Справочник транзисторов

2SC1424. Аналоги и основные параметры

Наименование производителя: 2SC1424

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 2.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 30 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 14 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V

Макcимальный постоянный ток коллектора (Ic): 0.05 A

Предельная температура PN-перехода (Tj): 175 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 1500 MHz

Ёмкость коллекторного перехода (Cc): 1.5 pf

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: TO72

Аналоги (замена) для 2SC1424

- подбор ⓘ биполярного транзистора по параметрам

2SC1424 даташит

8.1. Size:340K no
2sc1426.pdf pdf_icon

9.1. Size:51K panasonic
2sc1473 e.pdf pdf_icon

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit mm 2SC1473 complementary to 2SA1018 5.0 0.2 4.0 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector t

9.2. Size:47K panasonic
2sc1473.pdf pdf_icon

9.3. Size:47K hitachi
2sc1472.pdf pdf_icon

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 1 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current

9.4. Size:126K no
2sc1475.pdf pdf_icon

9.5. Size:104K savantic
2sc1402.pdf pdf_icon

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

9.6. Size:30K wingshing
2sc1413a.pdf pdf_icon

NPN TRIPLE DIFFUSED 2SC1413A PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current

9.7. Size:66K wingshing
2sc1454.pdf pdf_icon

9.8. Size:180K inchange semiconductor
2sc1444.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1444 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8

9.9. Size:185K inchange semiconductor
2sc1447.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1447 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

9.10. Size:202K inchange semiconductor
2sc1403.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC1403 DESCRIPTION Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Bas

9.11. Size:205K inchange semiconductor
2sc1413a.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1413A DESCRIPTION High Collector-base breakdown voltage 1500V Low saturation voltage@5A Large area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the horizontal output stage in power-transformer-less television receivers. ABSOLUTE MAXIMU

9.12. Size:177K inchange semiconductor
2sc1441.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1441 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

9.13. Size:183K inchange semiconductor
2sc1449.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1449 DESCRIPTION High Collector Current I = 2.0A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. AB

9.14. Size:179K inchange semiconductor
2sc1456.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1456 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 3

9.15. Size:102K inchange semiconductor
2sc1402.pdf pdf_icon

9.16. Size:184K inchange semiconductor
2sc1446.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1446 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

9.17. Size:177K inchange semiconductor
2sc1431.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1431 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

9.18. Size:176K inchange semiconductor
2sc1454.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1454 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

9.19. Size:185K inchange semiconductor
2sc1418.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1418 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

9.20. Size:179K inchange semiconductor
2sc1450.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1450 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1

9.21. Size:184K inchange semiconductor
2sc1448.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1448 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

9.22. Size:180K inchange semiconductor
2sc1445.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1445 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1

9.23. Size:177K inchange semiconductor
2sc1433.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1433 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

9.24. Size:127K inchange semiconductor
2sc1413.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

9.25. Size:185K inchange semiconductor
2sc1419.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1419 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

9.26. Size:178K inchange semiconductor
2sc1469.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1469 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

9.27. Size:177K inchange semiconductor
2sc1440.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1440 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

Другие транзисторы... 2SC1418 , 2SC1419 , 2SC142 , 2SC1420 , 2SC1421 , 2SC1422 , 2SC1422F , 2SC1423 , B647 , 2SC1425 , 2SC1426 , 2SC1427 , 2SC1428 , 2SC1429 , 2SC143 , 2SC1430 , 2SC1430-1 .