2SC1514 - описание и поиск аналогов

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= 300V(Min) Good Linearity of hFE Low Saturation Voltage APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMET

Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol

Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol

2SC1515(K) Silicon NPN Triple Diffused Application High voltage switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1515 (K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCES 200 V VCEO 150 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collector power dissipat

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1516 DESCRIPTION High Collector Current I = 1.5A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. AB