INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Good Linearity of hFE Low Saturation Voltage APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMET

Transistor2SC1518Silicon NPN epitaxial planer typeFor high-frequency bias oscillation of tape recordersUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances and high efficiency with alow-voltage power supply.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol

Transistor2SC1518Silicon NPN epitaxial planer typeFor high-frequency bias oscillation of tape recordersUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances and high efficiency with alow-voltage power supply.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol

2SC1515(K)Silicon NPN Triple DiffusedApplicationHigh voltage switchingOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1515 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCES 200 VVCEO 150 VEmitter to base voltage VEBO 5VCollector current IC 50 mACollector power dissipat

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1516DESCRIPTIONHigh Collector Current I = 1.5ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB