2N1700 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2N1700 Даташит. Аналоги

   Наименование производителя: 2N1700
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 40 MHz
   Ёмкость коллекторного перехода (Cc): 20 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO5

Аналог (замена) для 2N1700

- подбор ⓘ биполярного транзистора по параметрам

2N1700 Datasheet (PDF)

..1. Size:606K rca
2n1700.pdf pdf_icon

9.1. Size:605K rca
2n1701.pdf pdf_icon

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2n1702.pdf pdf_icon

9.3. Size:280K rca
2n1708.pdf pdf_icon

9.4. Size:179K rca
2n1703.pdf pdf_icon

9.5. Size:537K general electric
2n168a-2n168-2n169a-2n169-2n170.pdf pdf_icon

9.6. Size:109K general electric
2n170.pdf pdf_icon

9.7. Size:572K ixys
ixgh32n170a ixgt32n170a.pdf pdf_icon

IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A

9.8. Size:91K ixys
ixbt42n170a.pdf pdf_icon

Advance Technical InformationBIMOSFETTM MonolithicVCES = 1700 VIXBH 42N170ABipolar MOS TransistorIC25 = 42 AIXBT 42N170AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)

9.9. Size:75K ixys
ixbn42n170a.pdf pdf_icon

Advance Technical InformationBIMOSFETTM MonolithicIXBN 42N170A VCES = 1700 VBipolar MOS TransistorIC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXBN)E153432VCES TJ = 25C to 150C 1700 VEVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VVGEM Transient 30 VEIC25 TC = 25C42 ACIC90 TC =

9.10. Size:116K ixys
ixbh42n170a.pdf pdf_icon

Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)

9.11. Size:175K ixys
ixbh42n170 ixbt42n170.pdf pdf_icon

High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin

9.12. Size:569K ixys
ixgt32n170a.pdf pdf_icon

9.13. Size:573K ixys
ixgh32n170.pdf pdf_icon

High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC

9.14. Size:569K ixys
ixgh32n170a.pdf pdf_icon

9.15. Size:82K ixys
ixgr32n170h1.pdf pdf_icon

IXGR 32N170H1VCES = 1700 VHigh VoltageIC25 = 38 AIGBT with DiodeVCE(sat) = 3.5 VElectrically Isolated Tabtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25C3

9.16. Size:173K ixys
ixbt42n170.pdf pdf_icon

9.17. Size:117K ixys
ixbh42n170a ixbt42n170a.pdf pdf_icon

9.18. Size:56K ixys
ixgt22n170.pdf pdf_icon

Advance Technical DataHigh Voltage IXGH 22N170 VCES = 1700 VIXGT 22N170 IC25 = 40 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 290 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C44 ATO-247 AD (IXGH)IC90 TC = 90C22 AICM TC

9.19. Size:173K ixys
ixbh42n170.pdf pdf_icon

9.20. Size:519K ixys
ixgr32n170ah1.pdf pdf_icon

Advance Technical InformationIXGR 32N170AH1VCES = 1700 VHigh VoltageIC25 = 26 AIGBT with DiodeVCE(sat) = 5.2 VElectrically Isolated Tabtfi(typ) = 50 nsSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC

9.21. Size:56K ixys
ixgh22n170.pdf pdf_icon

9.22. Size:129K ixys
ixgx32n170ah1.pdf pdf_icon

IXGX 32N170AH1VCES = 1700 VHigh Voltage IGBTIC25 = 32 Awith DiodeVCE(sat) = 5.0 Vtfi(typ) = 50 nsPLUS247 (IXGX)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C32 AG = Gate, C = Collector,IC90 TC = 90C21 AE = Emitter, TAB =

9.23. Size:179K ixys
ixgf32n170.pdf pdf_icon

VCES = 1700VHigh Voltage IGBT IXGF32N170IC110 = 19AVCE(sat) 3.5V( Electrically Isolated Tab)tfi(typ) = 250nsISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 V12VGES Continuous 20 V5VGEM Transient 30 VISOLATED TABIC25 TC = 25C 44 AIC110 TC = 110C 19 AICM TC = 25C, 1ms 200 A1 = Gate 5 = Col

9.24. Size:520K ixys
ixgx32n170h1.pdf pdf_icon

Advance Technical InformationIXGX 32N170H1VCES = 1700 VHigh VoltageIC25 = 75 AIGBT with DiodeVCE(sat) = 3.3 Vtfi(typ) = 290 nsPLUS247 (IXGX)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C75 AG = Gate, C = Collector,IC90 TC

9.25. Size:573K ixys
ixgt32n170.pdf pdf_icon

9.26. Size:577K ixys
ixgh32n170 ixgt32n170.pdf pdf_icon

9.27. Size:168K ixys
ixbr42n170.pdf pdf_icon

Preliminary Technical InformationHigh Voltage, High Gain IXBR42N170 VCES = 1700VBIMOSFETTM MonolithicIC90 = 32ABipolar MOS TransistorVCE(sat) 2.9VISOPLUS247TMSymbol Test Conditions Maximum Ratings E153432VCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VIsolated TabCE

9.28. Size:172K ixys
ixth2n170d2 ixtt2n170d2.pdf pdf_icon

Depletion Mode VDSX = 1700VIXTT2N170D2MOSFETs ID(on) > 2AIXTH2N170D2 RDS(on) 6.5 N-ChannelTO-268 (IXTT)GSD (Tab)TO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VGVGSM Transient 30 VDD (Tab)SPD TC = 25C 568 WG = Gate

9.29. Size:218K inchange semiconductor
2n1702.pdf pdf_icon

isc Silicon NPN Power Transistor 2N1702DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 V

Другие транзисторы... 2N1690 , 2N1691 , 2N1692 , 2N1693 , 2N1694 , 2N1699 , 2N169A , 2N170 , TIP41C , 2N1701 , 2N1702 , 2N1703 , 2N1704 , 2N1705 , 2N1706 , 2N1707 , 2N1708 .