Биполярный транзистор 2SC1534 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC1534
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 23 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 800 MHz
Ёмкость коллекторного перехода (Cc): 16 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO128
2SC1534 Datasheet (PDF)
2sc1518 e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SC1518Silicon NPN epitaxial planer typeFor high-frequency bias oscillation of tape recordersUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances and high efficiency with alow-voltage power supply.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol
2sc1567.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Power Transistors2SC1567, 2SC1567ASilicon NPN epitaxial planar typeFor low-frequency high power driverUnit: mm8.0+0.50.13.20.2Complementary to 2SA0794, 2SA0794A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requires no insulati
2sc1573.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SC1573, 2SC1573A, 2SC1573BSilicon NPN triple diffusion planer typeFor high breakdown voltage general amplificationUnit: mmFor small TV video output5.9 0.2 4.9 0.2Complementary to 2SC1573 and 2SA879FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)0.7 0.1Parameter Symbol Ratings Unit2.54 0
2sc1509 e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SC1509Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA7775.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo
2sc1573 e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SC1573, 2SC1573A, 2SC1573BSilicon NPN triple diffusion planer typeFor high breakdown voltage general amplificationUnit: mmFor small TV video output5.9 0.2 4.9 0.2Complementary to 2SC1573 and 2SA879FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)0.7 0.1Parameter Symbol Ratings Unit2.54 0
2sc1568.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Power Transistors2SC1568Silicon NPN epitaxial planar typeFor low-voltage type medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0900 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances and high efficiency with a low-voltage power supply TO-126B package which incorporate
2sc1518.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SC1518Silicon NPN epitaxial planer typeFor high-frequency bias oscillation of tape recordersUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances and high efficiency with alow-voltage power supply.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol
2sc1509.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SC1509Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA7775.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo
2sc1515.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC1515(K)Silicon NPN Triple DiffusedApplicationHigh voltage switchingOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1515 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCES 200 VVCEO 150 VEmitter to base voltage VEBO 5VCollector current IC 50 mACollector power dissipat
2sc1520.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1520 DESCRIPTION With TO-202 package High voltage High transition frequency APPLICATIONS For color TV chroma output and video output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol3 Emitter Absolute maximum ratings (Ta
2sc1505 1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1
2sc1505.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JMnic Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outl
2sc1507.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PAR
2sc1573-a 3da1573-a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC1573(3DA1573) 2SC1573A(3DA1573A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier and video frequency output in small screen TV. :,f , 2SA879(3CA879) TFeatures: High V , high f ; Complementary pair with 2SA879(3CA879). CEO T/Absolute maximum rati
2sc1504.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1504DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 4
2sc1567 2sc1567a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION With TO-126 package Complement to type 2SA794/794A High collector to emitter voltage VCEO APPLICATIONS For low-frequency high power driver applications Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION
2sc1580.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1580DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sc1514.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Good Linearity of hFE Low Saturation Voltage APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMET
2sc1576.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1576DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sc1579.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1579DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sc1567.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor 2SC1567DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of low-frequency and 40Wto 100W output
2sc1516.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1516DESCRIPTIONHigh Collector Current I = 1.5ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB
2sc1501.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION With TO-126 package High breakdown voltage Large power dissipation APPLICATIONS For medium power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base
2sc1586.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1586DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sc1505.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor 2SC1505DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV chroma outputCircuits and sound output circui
2sc1585.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1585DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sc1568.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1568DESCRIPTIONSilicon NPN epitaxial planar typeLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage type medium output poweramplificationsABSOLUTE MAXIMUM
2sc1584.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN PowerTransistor 2SC1584DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SA907Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T
2sc1569.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor 2SC1569DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-:V = 300V(Min)(BR)CEODC Current Gain-: h = 40-170 @I = 50mA, V = 10VFE C CEHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM
2sc1507.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1507DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color T
2sc1520.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1520 DESCRIPTION With TO-202 package High voltage High transition frequency APPLICATIONS For color TV chroma output and video output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=2
2sc1577.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1577DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sc1507-to220f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220F package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .