Биполярный транзистор 2SC1563
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC1563
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25
W
Макcимально допустимое напряжение коллектор-база (Ucb): 55
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 35
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V
Макcимальный постоянный ток коллектора (Ic): 2
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 600
MHz
Ёмкость коллекторного перехода (Cc): 24
pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора:
TO128
Аналоги (замена) для 2SC1563
2SC1563
Datasheet (PDF)
8.2. Size:93K panasonic
2sc1567.pdf Power Transistors2SC1567, 2SC1567ASilicon NPN epitaxial planar typeFor low-frequency high power driverUnit: mm8.0+0.50.13.20.2Complementary to 2SA0794, 2SA0794A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requires no insulati
8.3. Size:94K panasonic
2sc1568.pdf Power Transistors2SC1568Silicon NPN epitaxial planar typeFor low-voltage type medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0900 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances and high efficiency with a low-voltage power supply TO-126B package which incorporate
8.4. Size:126K inchange semiconductor
2sc1567 2sc1567a.pdf Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION With TO-126 package Complement to type 2SA794/794A High collector to emitter voltage VCEO APPLICATIONS For low-frequency high power driver applications Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION
8.5. Size:195K inchange semiconductor
2sc1567.pdf isc Silicon NPN Power Transistor 2SC1567DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of low-frequency and 40Wto 100W output
8.6. Size:190K inchange semiconductor
2sc1568.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1568DESCRIPTIONSilicon NPN epitaxial planar typeLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage type medium output poweramplificationsABSOLUTE MAXIMUM
8.7. Size:191K inchange semiconductor
2sc1569.pdf isc Silicon NPN Power Transistor 2SC1569DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-:V = 300V(Min)(BR)CEODC Current Gain-: h = 40-170 @I = 50mA, V = 10VFE C CEHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM
Другие транзисторы... 2N3200
, 2N3201
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, 2N3204
, 2N3205
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, B772
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.