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2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO

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DATA SHEETSILICON TRANSISTOR2SC1623AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURESPACKAGE DIMENSIONS High DC Current Gain: hFE = 200 TYP.in millimeters(VCE = 6.0 V, IC = 1.0 mA)2.8 0.2 High Voltage: VCEO = 50 V1.5 0.65+0.10.15ABSOLUTE MAXIMUM RATINGSMaximum Voltages and Current (TA = 25 C)2Collector to

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

2SA821STransistorsTransistors2SC1651S(94L-183-A35)(94L-519-C35)274

2SC1623Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Epitaxial TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +15

2SC1623-L5MCCMicro Commercial ComponentsTM2SC1623-L620736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC1623-L7Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) High DC Cu

Transistor2SC1688Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesSmall common emitter reverse transfer capacitance Cre.High transition frequency fT.Center at the emitter pin.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 50 V1.27 1.27

2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High Frequency Power Amplifier Application AL Power Switching Applications 33Top ViewC BCLASSIFICATION OF hFE(1) 11 22K EProduct-Rank 2SC1654-N5 2SC1654-N6 2SC1654-N7Range 90~180 1

2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Switching and Amplification G HEmitterCollectorBase JCLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BLBA 4.40 4

2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. AL High Voltage:VCEO=50V. 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B Range 90~

2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Collector Current G H General Purpose Switching and Amplification EmitterBase J CollectorA DCLASSIFICATION OF hFE Millimeter BREF.Min. Max.Product-Rank 2SC1675-R 2SC1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector

Transys ElectronicsL I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0. 25 W (Tamb=25) 2. COLLECTOR Collector current 3. BASE ICM: 0.02 A . 1 2 3 Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECT

2SC1654TRANSISTOR(NPN)SOT23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 180 V CBOV Collector-Emitter Voltage 160 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 50 mA PC C

2SC1623TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 mA

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM1623MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 50 Vdc-C

2SC1623 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage Dimensions in inches and (millimeters)50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VI

2SC1627A TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Complementary to 2SA817A 8.400Driver Stage Application of 30 to 35 Watts Amplifiers 8.8000.900 1.1000.400MAXIMUM RATINGS(TA=25 unless otherwise noted) 0.60013.80014.200Symbol parameter Value Units VCBO 80 VCollector-Base Voltage 1.500 TYP

2SC1675(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features 2SC1675 is designed for use in AM converter AM/FM if amplifier and local oscillator of AM/FM tuner MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeter

2SC1623NPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO50 VVCBOCollector-Base Voltage 60 VVEBOEmitter-Base Voltage 7 VICCollector Current - Continuous 150 mATotal Device Dissipation FR-5 BoardPD225 mWTA=25C1.8 mW/CDerate above 25CRJAThermal Resistance,

FM120-M WILLAS 2SC1623xLT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize b

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage 50 VVCEO Collector

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage:Vceo=50V MARKING:L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V

2SC1623T(BR3DG1623T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features h , V 2SA812T(BR3CG812T)FE CEO,High hFE and VCEO, complementary pair with 2SA812T(BR3CG812T). / Applications Audio frequency general amp

2SC1627AF(BR3DG1627AF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 3035W 2SA817AF(BR3CG817AF) Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(BR3CG817AF). / Applications

2SC1674 Rev.F Apr.-2018 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,,High gain bandwidth ,small output capacitance, low noise figure. / Applications ,

2SC1623W(BR3DG1623W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features h , V 2SA812W(BR3CG812W)FE CEO,High hFE and VCEO, complementary pair with 2SA812W(BR3CG812W). / Applications Audio frequency general a

2SC1623 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , V 2SA812 FE CEO,High hFE and VCEO, complementary pair with 2SA812. / Applications Audio frequency general amplifier application.

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPb-Free packkage is availableL2SC1623SWT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3L2SC1623SWT1G L7 3000/Tape&Reel10000/Tape&ReelL2SC1623SWT3G L712MAXIMUM RATINGSSC-70Rating Symbol Value UnitCollector-Emitter Voltage VCEO 50 VCollector-Base Voltage VCBO 60 V 3COLLECTOREmitter-Base Volt

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&ReelS-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD.L2SC1623QLT1GGeneral Purpose TransistorsSeriesPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC1623QLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.SeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1

SMD Type TransistorsNPN Transistors2SC1654SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=160V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Colle

SMD Type TransistorsNPN Transistors2SC1653SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=130V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Colle

SMD Type TransistorsNPN Transistors2SC1623SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh DC Current Gain:1 2hFE = 200 TYP.+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1VCE = 6.0 V, IC = 1.0 mAHigh Voltage:VCE O = 50 V 1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 60 VColle

SMD Type TransistorsNPN Transistors2SC1621SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=20V1 2+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

Product specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES High DC current gain:h =200TYP FEPb (V =6.0V,I =1.0mA). CE CLead-free High Voltage:V =50V. CEO MSL 1. APPLICATIONS NPN Silicon Epitaxial Planar Transistor. Audio frequency general purpose amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC1623

2SC1623TRANSISTOR (NPN) TRANSISTOR (NPN)FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V2. EMITTER 3. COLLECTOR IC Collector Current -C

RUMW UMW 2SC1623SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitte

2SC1623Plastic-Encapsulate TransistorsNPN SiliconFEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50VSOT-23 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit2. EMITTER 3. COLLECTORVCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Curren

SOT-23 Plastic-Encapsulate TransistorsFormosa MS 2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA SOT-23 High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit2. EMITTER 3. COLLECTOR VCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Vol

2SC1623 SOT-23 Plastic-Encapsulate Transistors2SC1623 TRANSISTOR (NPN)SOT-23 FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V 1. BASE2. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTORSymbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 50 V CEOVEBO Emitter-Base Voltage 5

www.msksemi.com2SC1623-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA1. BASE High voltage:VCEO=50V2. EMITTERSOT23 3. COLLECTORCLASSIFICATION OF hFE Rank L4 L5 L6 L7Range 90-180 135-270 200-400 300-600Marking L4 L5 L6 L7MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parame

2SC1623PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current GainhFE=200(Typ.) VCE=6V, IC=1mA High VoltageVCEO = 50V MECHANICAL DATA Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623--T3 SOT-23 Tape Reel See Classifica

2SC1623NPN Transistors3Features21.BaseHigh DC Current Gain:2.EmitterhFE = 200 TYP.1 3.CollectorVCE = 6.0 V, IC = 1.0 mA Simplified outline(SOT-23)High Voltage:VCE O = 50 VAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector current (D

Jingdao Microelectronics co.LTD 2SC16232SC1623 SOT-23NPN TRANSISTOR3FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V 12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASESymbolParameter Value Unit 2.EMITTER3.COLLECTORCollectorBase Voltage VCBO 60 VCollectorEmit

2SC1623TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 m

2SC1623SOT323 TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit3. COLLECTOR VCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 100 m

2SC1623SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage:Vceo=50V MARKING:L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage -

2SC16232SC16232SC16232SC16232SC1623 TRANSISTOR(NPN)FEATURE SOT-23 High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA 1BASE High voltage: VCEO=50V 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base VoltageVCEO 50 VCollector-Emitter VoltageVEBO Emitter-Base Voltage 5 VIC Co

RoHS RoHSCOMPLIANT COMPLIANT 2SC1623 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-23 P Terminals: Tin plated leads, solderable per

12SC1623W TRANSISTOR (NPN)FEATURESOT- 323High DC current gain :h =200(Typ)V =6V, I =1mAFE CE CHigh voltage: V =50VCEOMARKINGL6MAXIMUM RATINGS (T =25 unless otherwise noted)ASymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEOCollector-Emitter Voltage 50 VVEBOEmitter-Base Voltage 5 VI Collector Current -Continuous 100 mACP Collector Power

2SC1623 TRANSISTOR (NPN) FEATURE SOT-23 High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage: VCEO=50V 1BASE 2EMITTER 3COLLECTOR MARKINGL6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Conti

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGYCO.,LTD2SC1623MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV 50 VdcCEO-Collector-Base VoltageV 60 VdcCBO-Emitter-Base VoltageV 5.0 VdcEBO-

Silicon Epitaxial Planar Transistor 2SC1623 FEATURES High DC current gain:h =200TYP FEPb (V =6.0V,I =1.0mA). CE CLead-free High Voltage:V =50V. CEO MSL 1. APPLICATIONS NPN Silicon Epitaxial Planar Transistor. Audio frequency general purpose amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC1623 L4/L5/L6/L7 SOT-23

2SC1623BIPOLAR TRANSISTOR (NPN)FEATURES High DC current gain :h =200(Typ) V =6V,I =1mAFE CE C High voltage:V =50VCEO Surface Mount device Complementary to 2SA812SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

Features ASOT-23 L6 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00Maximum Ratings @ T = 25C unless otherwise specifiedA JJ0.013 0.1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1625DESCRIPTIONSilicon NPN planar typeComplementary to 2SA815High breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1610DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1624DESCRIPTIONSilicon NPN planar typeComplementary to 2SA814High breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1683DESCRIPTIONSilicon NPN triple diffused mesaHigh breakdown voltageLarge collector dissipationComplementary pair with 2SA843100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifierColor TV vertical deflection outputABSO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1678DESCRIPTIONSilicon NPN planar typeHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1626DESCRIPTIONSilicon NPN planar typeComplementary to 2SA816High breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1617DESCRIPTIONSilicon NPN triple diffused typeHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBlack and white TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1672DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 120V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION With TO-220 package Complement to type 2SA814/815 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1618DESCRIPTIONHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1609DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1619DESCRIPTIONHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1667DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 90V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1623DESCRIPTIONSOT-23 plastic-encapsulate transistorsHigh DC current gain:h =200(TYP)FE@V = 6V, I = 1mACE CHigh voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency general purpose amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB