Биполярный транзистор 2SC1676 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC1676
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO128
2SC1676 Datasheet (PDF)
2sc1678.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc1674.pdf
2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Switching and Amplification G HEmitterCollectorBase JCLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BLBA 4.40 4
2sc1675.pdf
2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Collector Current G H General Purpose Switching and Amplification EmitterBase J CollectorA DCLASSIFICATION OF hFE Millimeter BREF.Min. Max.Product-Rank 2SC1675-R 2SC1
2sc1674.pdf
Transys ElectronicsL I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0. 25 W (Tamb=25) 2. COLLECTOR Collector current 3. BASE ICM: 0.02 A . 1 2 3 Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECT
2sc1675.pdf
2SC1675(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features 2SC1675 is designed for use in AM converter AM/FM if amplifier and local oscillator of AM/FM tuner MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeter
2sc1674.pdf
2SC1674 Rev.F Apr.-2018 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,,High gain bandwidth ,small output capacitance, low noise figure. / Applications ,
2sc1678.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1678DESCRIPTIONSilicon NPN planar typeHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
2sc1672.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1672DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 120V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
