2SC1708A. Аналоги и основные параметры
Наименование производителя: 2SC1708A
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 1.8 pf
Статический коэффициент передачи тока (hFE): 500
Корпус транзистора: TO92
Аналоги (замена) для 2SC1708A
- подборⓘ биполярного транзистора по параметрам
2SC1708A даташит
2sc1755.pdf
Ordering number EN429E NPN Triple Diffused Planar Silicon Transistor 2SC1755 TV Chroma, Video, Audio Output Applications Package Dimensions unit mm 2010C [2SC1755] JEDEC TO-220AB 1 Base EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 300 V Collector-to-Emitter
2sc1741s.pdf
2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC1741S Features External dimensions (Units mm) 1) High ICMax. 2SC1741S ICMax. = 0.5A 2) Low VCE(sat). 4 0.2 2 0.2 Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. 0.45+0.15 -0.05 Structure Epitaxial planar type 0.45+0.15 2.5+0.4 0.5 -0.05 -0.1 5 NPN silicon tra
2sc1741as 2sc3359s 2sd1484.pdf
2SD1949 / 2SD1484K / 2SC1741S Transistors Transistors 2SC3359S (96-678-D15) (SPEC-D16) 318
2sc2412k 2sc4081 2sc4617 2sc5658 2sc1740s.pdf
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN
2sc1741.pdf
2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K / 2SC4097 / 2SC1741S Features External dimensions (Units mm) 1) High ICMax. 2SC2411K 2SC4097 ICMax. = 0.5mA 2.9 0.2 2) Low VCE(sat). 1.1+0.2 2.0 0.2 1.9 0.2 -0.1 1.3 0.1 0.9 0.1 0.8 0.1 0.95 0.95 Optimal for low voltage operation. 0.65 0.65 0.7 0.1 0.2 (1) (2) (1) (2) 3) Complemen
2sc1740s-q-r-s.pdf
MCC Micro Commercial Components 2SC1740S-Q TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1740S-R Phone (818) 701-4933 2SC1740S-S Fax (818) 701-4939 Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisture Sensitivity
2sc1775.pdf
2SC1775, 2SC1775A Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA872/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1775, 2SC1775A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC1775 2SC1775A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltag
2sc1740s.pdf
2SC1740S 0.15A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Low Cob CLASSIFICATION OF hFE Millimeter REF. Min. Max. A 3.90 4.10 Product-Rank 2SC1740S-Q 2SC1740S-R 2SC1740S-S B 3.05 3.25 C 1.42 1.62 Range 120 270 180 390 270 560 D 15.1 15.5 E 2.9
2sc1740s.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC1740S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Low Cob 2. COLLECTOR 3. BASE Equivalent Circuit C1740 C1740=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORMATION Part Number Package Packing Method Pack
2sc1741s.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC1741S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High IC 3. BASE Low VCE(sat). Optimal for Low Voltage Operation Complements the 2SA854S MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Col
2sc1766.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC1766 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Speed Switching Time 3. EMITTER Low Collector-emitter saturation voltage APPLICATIONS Power Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector
2sc1755.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1755 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volt
2sc1756.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1756 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sc1766.pdf
2SC1766 SOT-89-3L TRANSISTOR(NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER APPLICATIONS Power Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage
2sc1740s to-92s.pdf
2SC1740S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features Low Cob MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction Te
2sc1766.pdf
FM120-M WILLAS THRU 2SC1766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features TRANSISTOR (NPN) Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOT-89 FEATURES SOD-123H Low profile surface
2sc1740m.pdf
2SC1740M(BR3DG1740M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , 2SA933M(BR3CG933M) Small base output capacitance, complementary pair with 2SA933M(BR3CG933M). / Applications General purpose a
2sc1741am.pdf
2SC1741AM(BR3DG1741AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,V CE(sat) High IC, Low VCE(sat) / Applications Medium power transistor. / Equivalent Circuit
2sc1766gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC1766GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time tstg= 1.0uSec (typ.) C * PC= 1.0 to 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. * High sat
2sc1740s.pdf
SUNROC 2SC1740S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Low Cob 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 3. BASE VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V 1 2 3 VEBO Emitter-Base Voltage 7 V IC Collector Current Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction
2sc1755.pdf
isc Silicon NPN Power Transistor 2SC1755 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO DC Current Gain- h = 40-200 @I = 10mA, V = 10V FE C CE High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma, video , audio output applications. A
2sc1723.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1723 DESCRIPTION Silicon NPN triple diffused LTP High breakdown voltage Large collector dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency high voltage power amplifier TV power supply drivers ABSOLUTE MAXIMUM RATINGS(T
2sc1756.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1756 DESCRIPTION High breakdown voltage Large collector dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF output of color TV for video output AF output of B/W TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sc1777.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1777 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
2sc1730.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1730 DESCRIPTION Low Base Time Constant; r = 10 ps TYP. bb CC High Gain Bandwidth Product f = 1100 MHz TYP. T Low Output Capacitance; C = 1.5 pF Max. OB Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV VHF, UHF tuner oscillator applications. ABS
2sc1785.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1785 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sc1783.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1783 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
Другие транзисторы: 2SC170, 2SC1703, 2SC1706, 2SC1706H, 2SC1707, 2SC1707A, 2SC1707H, 2SC1708, 2N4401, 2SC1708H, 2SC1709, 2SC171, 2SC1710, 2SC1711, 2SC1711A, 2SC1712, 2SC1713
History: 2N2856-3 | BCP55-16
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