2SC186 datasheet, аналоги, основные параметры
Наименование производителя: 2SC186 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.085 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.025 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 125 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO1
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Аналоги (замена) для 2SC186
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2SC186 даташит
2sc1863.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1863 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1
2sc1868.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1868 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sc1815l.pdf
2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit mm Low Noise Amplifier Applications High breakdown voltage, high current capability V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA h (I = 0.1 mA)/h (I = 2 mA)
2sc1815-bl-gr-o-y.pdf
2SC1815-O MCC 2SC1815-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1815-GR CA 91311 Phone (818) 701-4933 2SC1815-BL Fax (818) 701-4939 Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN Silicon Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation. Epitaxial
2sc1846.pdf
Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0885 3.16 0.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with 2SA0885 TO-126B package which requires no insulation plate for installa- tion t
2sc1847.pdf
Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0886 3.16 0.1 Features Output of 4 W can be obtained by a complementary pair with 2SA0886 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25
2sc1815.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen
2sc1890.pdf
2SC1890, 2SC1890A Silicon NPN Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SA893/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1890, 2SC1890A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SC1890 2SC1890A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to
2sc1881.pdf
2SC1881(K) Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 6.8 k 400 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current I
2sc1827.pdf
2SC1827 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SA769 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junctio
2sc1893.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VAL
2sc1894.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION With TO-3 package High breakdown voltage Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAME
2sc1827.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION With TO-220 package Complement to type 2SA769 Collector current IC=4A Collector dissipation PC=30W@TC=25 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO
2sc1846.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION With TO-126 package Complement to type 2SA885 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
2sc1875.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1875 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU
2sc1847.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION With TO-126 package Complement to type 2SA886 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
2sc1815.pdf
2SC1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW
2sc1815.pdf
2SC1815 Silicon Epitaxial Planar Transistor FEATURES A High voltage and high current SOT-23 Dim Min Max VCEO=50V(Min),IC=150mA(Max). A 2.70 3.10 E Excellent hFE linearity hFE(2)=100 (Typ) at VCE=6V,IC=150mA B 1.10 1.50 K B hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) C 1.0 Typical D 0.4 Typical Low noise. E 0.35 0.48 J D Complementary to 2SA1015. G 1.80 2.00 APPLIC
2sc1815.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base
2sc1815.pdf
2SC1815 Rev.E Nov.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , , h , , 2SA1015 FE High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. / Applications
2sc1815m.pdf
2SC1815M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , , h , FE High voltage and high current, excellent hFE linearity ,low noise. / Applications , A
2sc1815o 2sc1815y 2sc1815g 2sc1815l.pdf
2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor 2SA1015 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations.
2sc1815.pdf
SMD Type or SMD Type TransistICs NPN Transistors 2SC1815 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features 1 2 Power dissipation +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VE
2sc1846 3da1846.pdf
2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier. V , 2SA885(3CA885) 3W CE(sat) Features Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 45 V
2sc1815lt1.pdf
2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SA1015 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN 1 2 3 Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25 * PD 225 mW NO
2sc1815o 2sc1815q 2sc1815gr 2sc1815bl.pdf
2SC1815 Equivalent Circuit Collector-Base Voltage 60 V Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.15 A Collector Power D
2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf
2SC2078 Silicon NPN POWER TRANSISTOR DESCRIPTION B F SEATING T PLANE C 4 Designed primarily for SSB linear power T S amplifier applications A Q 1 2 3 H FEATURES U K Z Specified 12.5V, 27MHz Characteristics L PO = 4W PEP V ft = 200 MHz STYLE 1 R G PIN 1. BASE 2. COLLECTOR J D 3. EMITTER N 4. COLLECTOR DIMENSIONS UNIT A B C D F G H J K L N Q R
2sc1815.pdf
2SC1815 SOT-23 Plastic-Encapsulate Transistors 2SC1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector to Base Voltage 60 V CBO V Collector to Emitter Voltage 50 V CEO VEBO Emitter to Base Voltage 5 V IC Collector Current
2sc1815-ms.pdf
www.msksemi.com 2SC1815-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE MARKING HF 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO VCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V EBO I Collector Cur
2sc1815.pdf
2SC1815 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES MARKING HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 50 V VEBO Emitter-Base Volta
2sc1815.pdf
2SC1815 2 SC1815 TRANSISTOR (NPN) FEATURE SOT-23 Power dissipation 1 BASE 2 EMITTER 3 COLLECTOR MARKING HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW T
2sc1815.pdf
2SC1815 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 60Volts POWER 200mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=50V. Collector current IC=0.15A. ansition frequency fT>80MHz @ Tr IC=1mAdc, VCE=10Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Solde
2sc1815.pdf
2SC1815 BIPOLAR TRANSISTOR (NPN) FEATURES High current And High voltage Excellent h Linearity FE Low Noise Surface Mount device Complementary to 2SA1015 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise no
2sc1881k.pdf
isc Silicon NPN Darlington Power Transistor 2SC1881K DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.2V(Max)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for High g
2sc1828.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1828 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8
2sc1893.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1893 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15
2sc1826.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1826 DESCRIPTION High breakdown voltage Large collector dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt
2sc1894.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1894 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15
2sc1870.pdf
isc Silicon NPN Power Transistor 2SC1870 DESCRIPTION With TO-3 package High switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 250 V CEO V Emitter-Base Vo
2sc1848.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1848 DESCRIPTION Silicon NPN epitaxial planar High voltage Complement to Type 2SA887 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 70 V CB
2sc1827.pdf
isc Silicon NPN Power Transistor 2SC1827 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80(V)(Min.) (BR)CEO Complement to Type 2SA769 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt
2sc1815.pdf
INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1815 DESCRIPTION High Voltage and High Current Vceo=50V(Min. Ic=150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SA1015(O,Y,GR class) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver sta
2sc1871a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1871A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
2sc1846.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1846 DESCRIPTION Silicon NPN epitaxial planar type Low collector to emitter saturation voltage Output of 3W can be obtained by a complementary with 2SA0885 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for medium output power amplifier
2sc1819m.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION With TO-220 package High VCEO Large PC APPLICATIONS For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta
2sc1895.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1895 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15
2sc1875.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1875 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sc1881.pdf
isc Silicon NPN Darlington Power Transistor 2SC1881 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.2V(Max)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for High ga
2sc1847.pdf
isc Silicon NPN Power Transistor 2SC1847 DESCRIPTION High Collector Current-I = 1.5A C Low Saturation Voltage V = 1V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Complement to Type 2SA0886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts audio amplifier, voltage regul
2sc1880.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC1880 DESCRIPTION High DC Current Gain Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and
Другие транзисторы: 2SC1853, 2SC1854, 2SC1855, 2SC1856, 2SC1857, 2SC1859, 2SC1859-1, 2SC1859-2, 2SC5198, 2SC1860, 2SC1861, 2SC1862, 2SC1863, 2SC1864, 2SC1864A, 2SC1865, 2SC1866
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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