Биполярный транзистор 2SC1898
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC1898
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V
Макcимальный постоянный ток коллектора (Ic): 0.03
A
Предельная температура PN-перехода (Tj): 125
°C
Граничная частота коэффициента передачи тока (ft): 250
MHz
Ёмкость коллекторного перехода (Cc): 0.9
pf
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора:
TO92
Аналоги (замена) для 2SC1898
2SC1898
Datasheet (PDF)
8.1. Size:24K hitachi
2sc1890.pdf 
2SC1890, 2SC1890ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SA893/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1890, 2SC1890AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1890 2SC1890A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to
8.2. Size:143K jmnic
2sc1893.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VAL
8.3. Size:143K jmnic
2sc1894.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION With TO-3 package High breakdown voltage Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAME
8.4. Size:177K inchange semiconductor
2sc1893.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1893DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15
8.5. Size:177K inchange semiconductor
2sc1894.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1894DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15
8.6. Size:177K inchange semiconductor
2sc1895.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1895DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
