Биполярный транзистор 2SC1901 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC1901
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.6 W
Макcимально допустимое напряжение коллектор-база (Ucb): 24 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 13 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 1400 MHz
Ёмкость коллекторного перехода (Cc): 1.2 pf
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора: TO5
2SC1901 Datasheet (PDF)
2sc1907.pdf
2SC1907Silicon NPN Epitaxial PlanarApplicationUHF TV Tuner, Local oscillatorOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC1907Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 19 VEmitter to base voltage VEBO 2VCollector current IC 50 mAEmitter current IE 50 mACollect
2sc1906.pdf
2SC1906Silicon NPN Epitaxial PlanarADE-208-1058 (Z)1st. EditionMar. 2001Application VHF amplifier Mixer, Local oscillatorOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC1906Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 19 VEmitter to base voltage VEBO 2VColle
2sc1905.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION With TO-220C package High breakdown voltage Large collector power dissipation APPLICATIONS Color TV horizontal deflection driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE
2sc1907.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC1907DESCRIPTIONLow NoiseHigh Gain Bandwidth Product100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF TV tuner and local oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo
2sc1904.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1904DESCRIPTIONLow collector to emitter saturation voltageOutput of 1W can be obtained by a complementarywith 2SA899100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sc1906.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC1906DESCRIPTIONLow NoiseHigh Gain Bandwidth Product100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF amplifier,mixer and local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
2sc1905.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1905DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
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