JMnic Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1922DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltag

DATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHINGINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONSThe 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters)+0.3consists of two chips equivalent to the 2SC1275, and is designed for5.0 MIN. 3.5 0.2 5.0 MIN.differential amplifier an

2SC1921Silicon NPN Triple DiffusedApplication High frequency high voltage amplifier Video outputOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC1921Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 250 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 5VCollector current IC 50 mACollect

2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES AD General purpose switching and amplification. BCLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y E CFRange 70~140 100~200G HEmitterMARKING CollectorBase JC1923

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1923 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V

DIP Type TransistorsNPN Transistors2SC1923Unit:mmTO-924.8 0.3 3.8 0.3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V0.60 Max General Purpose Switching Application0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1929DESCRIPTIONSi NPN planarCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF output for direct main operation TVABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI