2SC1929 - Даташиты. Аналоги. Основные параметры

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1929 DESCRIPTION Si NPN planar Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF output for direct main operation TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.7 pF (typ.) Low noise figure NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltag

DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters) +0.3 consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN. 3.5 0.2 5.0 MIN. differential amplifier an

2SC1921 Silicon NPN Triple Diffused Application High frequency high voltage amplifier Video output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC1921 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 250 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collect

2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES A D General purpose switching and amplification. B CLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y E C F Range 70 140 100 200 G H Emitter MARKING Collector Base J C1923

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1923 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V

JMnic Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

DIP Type Transistors NPN Transistors 2SC1923 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V 0.60 Max General Purpose Switching Application 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1922 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO