Справочник транзисторов. 2SC1994

 

Биполярный транзистор 2SC1994 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC1994
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Ёмкость коллекторного перехода (Cc): 3 pf
   Статический коэффициент передачи тока (hfe): 380
   Корпус транзистора: TO92

 Аналоги (замена) для 2SC1994

 

 

2SC1994 Datasheet (PDF)

 9.1. Size:80K  1
2sc1929.pdf

2SC1994
2SC1994

 9.2. Size:199K  toshiba
2sc1959.pdf

2SC1994
2SC1994

2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta == 25C) ==

 9.3. Size:525K  toshiba
2sc1923.pdf

2SC1994
2SC1994

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltag

 9.4. Size:168K  nec
2sc1941.pdf

2SC1994
2SC1994

 9.5. Size:169K  nec
2sc1940.pdf

2SC1994
2SC1994

 9.6. Size:36K  nec
2sc1927.pdf

2SC1994
2SC1994

DATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHINGINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONSThe 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters)+0.3consists of two chips equivalent to the 2SC1275, and is designed for5.0 MIN. 3.5 0.2 5.0 MIN.differential amplifier an

 9.7. Size:266K  mcc
2sc1959-gr-o-y.pdf

2SC1994
2SC1994

2SC1959-OMCCMicro Commercial ComponentsTM2SC1959-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SC1959-GRFax: (818) 701-4939Features Audio frequency low power amplifier applications, driver stage Power Siliconamplifier applications, switching applications Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA

 9.8. Size:37K  panasonic
2sc1980.pdf

2SC1994
2SC1994

Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitt

 9.9. Size:41K  panasonic
2sc1980 e.pdf

2SC1994
2SC1994

Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitt

 9.10. Size:78K  panasonic
2sa914 2sc1953 2sa914.pdf

2SC1994
2SC1994

 9.11. Size:39K  hitachi
2sc1942.pdf

2SC1994

 9.12. Size:39K  hitachi
2sc1907.pdf

2SC1994
2SC1994

2SC1907Silicon NPN Epitaxial PlanarApplicationUHF TV Tuner, Local oscillatorOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC1907Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 19 VEmitter to base voltage VEBO 2VCollector current IC 50 mAEmitter current IE 50 mACollect

 9.13. Size:30K  hitachi
2sc1921.pdf

2SC1994
2SC1994

2SC1921Silicon NPN Triple DiffusedApplication High frequency high voltage amplifier Video outputOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC1921Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 250 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 5VCollector current IC 50 mACollect

 9.14. Size:43K  hitachi
2sc1906.pdf

2SC1994
2SC1994

2SC1906Silicon NPN Epitaxial PlanarADE-208-1058 (Z)1st. EditionMar. 2001Application VHF amplifier Mixer, Local oscillatorOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC1906Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 19 VEmitter to base voltage VEBO 2VColle

 9.15. Size:37K  no
2sc1975.pdf

2SC1994

 9.16. Size:258K  no
2sc1908.pdf

2SC1994
2SC1994

 9.17. Size:37K  no
2sc1974.pdf

2SC1994

 9.18. Size:607K  secos
2sc1959.pdf

2SC1994
2SC1994

2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity High Transition Frequency MillimeterREF.Min. Max.A 4.40 4.70B 4.30 4.70C 12.70 -CLASSIFICATION OF hFE D 3.30 3.81E 0.36 0.56Product-Rank 2SC1959-O 2SC1959-

 9.19. Size:92K  secos
2sc1923.pdf

2SC1994

2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES AD General purpose switching and amplification. BCLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y E CFRange 70~140 100~200G HEmitterMARKING CollectorBase JC1923

 9.20. Size:64K  wingshing
2sc1983.pdf

2SC1994

2SC1983 NPN SILICON DARLINGTON TRANSISTORSWITCHING REGULATORS PWM INVERTERSSOLENOID AND RELAY DRIVERSSC-65ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150

 9.21. Size:488K  jiangsu
2sc1923.pdf

2SC1994
2SC1994

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1923 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V

 9.22. Size:144K  jmnic
2sc1942.pdf

2SC1994
2SC1994

JMnic Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

 9.23. Size:144K  jmnic
2sc1922.pdf

2SC1994
2SC1994

JMnic Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

 9.24. Size:118K  jmnic
2sc1913 2sc1913a.pdf

2SC1994
2SC1994

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and sy

 9.25. Size:147K  jmnic
2sc1905.pdf

2SC1994
2SC1994

JMnic Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION With TO-220C package High breakdown voltage Large collector power dissipation APPLICATIONS Color TV horizontal deflection driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

 9.26. Size:83K  sanken-ele
2sc1985 2sc1986.pdf

2SC1994

 9.27. Size:297K  lge
2sc1959.pdf

2SC1994
2SC1994

2SC1959(NPN)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 0.5 A PC Collector Power Dissipation 500 mW

 9.28. Size:715K  blue-rocket-elect
2sc1959m.pdf

2SC1994
2SC1994

2SC1959M(BR3DG1959M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , 2SA562M(BR3CG562M)FEExcellent hFE Linearity, complementary pair with 2SA562M(BR3CG562M). / Applications ,

 9.29. Size:1024K  kexin
2sc1923.pdf

2SC1994
2SC1994

DIP Type TransistorsNPN Transistors2SC1923Unit:mmTO-924.8 0.3 3.8 0.3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V0.60 Max General Purpose Switching Application0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V

 9.30. Size:185K  inchange semiconductor
2sc1986.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1986DESCRIPTIONSilicon NPN tripe diffused mesaCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral and industrial purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 9.31. Size:185K  inchange semiconductor
2sc1985.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1985DESCRIPTIONSilicon NPN tripe diffused mesaCollector-Emitter Breakdown Voltage-:V = 60(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral and industrial purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 9.32. Size:184K  inchange semiconductor
2sc1975.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1975DESCRIPTIONCollector-Base Breakdown Voltage: V =160V(Min)(BR)CBOWithstands worst overload conditions.100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for used in transceiver power output applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.33. Size:58K  inchange semiconductor
2sc1985 2sc1986.pdf

2SC1994
2SC1994

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1985 2SC1986 DESCRIPTION With TO-220 package Complement to type 2SA770/771 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25

 9.34. Size:206K  inchange semiconductor
2sc1942.pdf

2SC1994
2SC1994

isc Silicon NPN Power Transistor 2SC1942DESCRIPTIONHigh Voltage-V = 1500V(Min.)CEXCollector Current- I = 3.0ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 1500 VCE

 9.35. Size:212K  inchange semiconductor
2sc1971.pdf

2SC1994
2SC1994

isc Silicon NPN Power Transistor 2SC1971DESCRIPTIONHigh Power Gain-: G 7dB, P = 6W; V = 13.5Vpe O CEHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF power amplifiers on VHF band mobile radioapplications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

 9.36. Size:177K  inchange semiconductor
2sc1907.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC1907DESCRIPTIONLow NoiseHigh Gain Bandwidth Product100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF TV tuner and local oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

 9.37. Size:177K  inchange semiconductor
2sc1922.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1922DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

 9.38. Size:216K  inchange semiconductor
2sc1953.pdf

2SC1994
2SC1994

isc Silicon NPN Power Transistor 2SC1953DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA914Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power pre-amplification,whichis optimum for the pre-driver stage of a 60 W to 100 W

 9.39. Size:189K  inchange semiconductor
2sc1929.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1929DESCRIPTIONSi NPN planarCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF output for direct main operation TVABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 9.40. Size:125K  inchange semiconductor
2sc1913 2sc1913a.pdf

2SC1994
2SC1994

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symb

 9.41. Size:183K  inchange semiconductor
2sc1904.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1904DESCRIPTIONLow collector to emitter saturation voltageOutput of 1W can be obtained by a complementarywith 2SA899100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 9.42. Size:196K  inchange semiconductor
2sc1969.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN RF Power Transistor 2SC1969DESCRIPTIONWith TO-220 packagingReliable performance at higher powersAccurate reproduction of Input signalGreater dynamic rangeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplif

 9.43. Size:178K  inchange semiconductor
2sc1906.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC1906DESCRIPTIONLow NoiseHigh Gain Bandwidth Product100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF amplifier,mixer and local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

 9.44. Size:191K  inchange semiconductor
2sc1970.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1970DESCRIPTIONHigh Power Gain-: G 9.2dB,f= 175MHz, P = 1W; V = 13.5Vpe O CCHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF power amplifiers on VHF band mobile radioapplications.ABSOLUTE MAXIMUM RATING

 9.45. Size:190K  inchange semiconductor
2sc1913.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1913DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency high power driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

 9.46. Size:184K  inchange semiconductor
2sc1905.pdf

2SC1994
2SC1994

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1905DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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