Биполярный транзистор 2SC20 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC20
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.6 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Ёмкость коллекторного перехода (Cc): 50 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO5
2SC20 Datasheet (PDF)
2sc2075.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc2068.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc2036.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc2078.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Ordering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier ApplicationsPackage Dimensionsunit:mm2010C[2SC2078]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 80 VCollector-to-Emitter Voltage VCE
2sc2058s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC5659 / 2SC4618 / 2SC4098 /Transistors 2SC2413 / 2SC2058SHigh-frequency Amplifier Transistor(25V, 50mA, 300MHz)2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K /2SC2058S Features External dimensions (Units : mm)1) Low collector capacitance. (Cob : Typ. 1.3pF)2SC56591.22) Low rbb, high gain, and excellent noise characteristics.0.2 0.8 0.2(2)(3)(1)(1) Base Absolute maximum
2sc2001-m.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55
2sc2001-l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55
2sc2001-k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55
2sc2001.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE(sat) G HhFE(IC=100mA)200(Typ) VCE(sat)(700mA)0.2V(Typ) EmitterJCollectorBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC2001-M 2S
2sc2073.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150
2sc2060.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T 2SC2060 TRANSISTOR (NPN) TO-92L FEATURE 1. EMITTER Power Dissipation PCM: 0.75 W (Ta=25) 2. COLLECTOR Low Saturation Voltage (VCE(sat)=0.15V at 500mA) Complementary Pair with 2SA934 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value
2sc2001.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR (NPN) TO-92 FEATURES High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) 1. EMITTER VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE Equivalent Circuit C2001=Device code Solid dot=Green molding compound device, XXX if none,the normal dev
2sc2023.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2023Silicon NPN Triple Diffused Planar TransistorApplication : Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) (Ta=25C)Symbol 2SC2023 Symbol Conditions 2SC2023Unit Unit0.24.80.210.20.12.0VCBO 300 ICBO VCB=300V 1.0maxV mAVCEO 300 IEBO VEB=6V 1.0maxV mAVEBO 6
2sc2073.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2073(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Paramenter Value UnitsVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC C
2sc2060 to-92mod.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2060 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features8.400 Power dissipation PCM: 0.75 W (Tamb=25) 8.800 Low saturation voltage (VCE(sat)=0.15V at 500mA) 0.9001.100Complementary pair with 2SA934 0.4000.60013.80014.2001.500 TYPMAXIMUM RATINGS* TA=25 unless otherwise noted 2.900Dimensions in i
2sc2060.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2060 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.8008.200 Power dissipation PCM: 0.75 W (Tamb=25) Low saturation voltage (VCE(sat)=0.15V at 500mA) 0.6000.800Complementary pair with 2SA934 0.3500.55013.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 14.200Symbol Parameter Value UnitsVCBO
2sc2001.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2001(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base V
st2sc2073u.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 APeak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W To
2sc2073a 3da2073a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2073A(3DA2073A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940A(3CA940A) Features: Wide Safe Operating Area, complementary to 2SA940A(3CA940A). /Absolute maximum ratings(Ta=25)
2sc2073 3da2073.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940(3CA940) Features: Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25)
2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2078Silicon NPN POWER TRANSISTORDESCRIPTIONB FSEATINGT PLANEC 4Designed primarily for SSB linear powerTSamplifier applicationsAQ1 2 3HFEATURESUKZ Specified 12.5V, 27MHz CharacteristicsL PO = 4W PEPV ft = 200 MHzSTYLE 1:RGPIN 1. BASE2. COLLECTORJD3. EMITTERN4. COLLECTORDIMENSIONSUNIT A B C D F G H J K L N Q R
2sc2073.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2073NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1Base , 2SA940 1 PIN 2Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3Emitter / Applications
2sc2073.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2073Silicon NPN transistor / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1Base , 2SA940 1 PIN 2Collector 2 3Wide Safe Operating Area, complementary to 2SA940. PIN 3Emitter / Applications
2sc2073t1tl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2073T1TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 150
2sc2073.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBO
2sc2073.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2sc2075.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor 2SC2075DESCRIPTIONHigh transition frequencyWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS27MHz Power Amplifier ApplicationsRecommended for output stage applicationof AM 4W transmitterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2sc2022.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2022DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
2sc2085.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistors 2SC2085DESCRIPTIONCollector-Base Breakdown Voltage-: V = 300V(Min.)(BR)CBOLarge collector power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS1W output in class-A operationLine-operated AF amplifier chrominance outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc2023.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2023DESCRIPTIONSilicon NPN triple diffused planar transistorCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMU
2sc2026.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2026DESCRIPTIONLow NoiseNF= 3.0dB TYP. @ f= 500MHzHigh Power GainG = 15dB TYP. @ f= 500MHzpeHigh Gain Bandwidth Productf = 2.0GHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise amplifiers in the VHF
2sc2078.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150 Collector Current- :IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=15
2sc2027.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2027DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
2sc2028.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2028DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sc2098.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2098DESCRIPTIONSilicon NPN epitaxial planar100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2098 is designed for 25=50MHz AF power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
![2SC20](https://alltransistors.com/images/us.png)
![2SC20](https://alltransistors.com/images/es.png)
![2SC20](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050