2SC202. Аналоги и основные параметры
Наименование производителя: 2SC202
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.65 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 175 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO5
Аналоги (замена) для 2SC202
- подборⓘ биполярного транзистора по параметрам
2SC202 даташит
0.7. Size:23K sanken-ele
2sc2023.pdf 
2SC2023 Silicon NPN Triple Diffused Planar Transistor Application Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) (Ta=25 C) Symbol 2SC2023 Symbol Conditions 2SC2023 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 300 ICBO VCB=300V 1.0max V mA VCEO 300 IEBO VEB=6V 1.0max V mA VEBO 6
0.8. Size:184K inchange semiconductor
2sc2022.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2022 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
0.9. Size:184K inchange semiconductor
2sc2023.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2023 DESCRIPTION Silicon NPN triple diffused planar transistor Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMU
0.10. Size:175K inchange semiconductor
2sc2026.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION Low Noise NF= 3.0dB TYP. @ f= 500MHz High Power Gain G = 15dB TYP. @ f= 500MHz pe High Gain Bandwidth Product f = 2.0GHz TYP. T 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise amplifiers in the VHF
0.11. Size:177K inchange semiconductor
2sc2027.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2027 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
0.12. Size:184K inchange semiconductor
2sc2028.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2028 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
Другие транзисторы: 2SC2010, 2SC2011, 2SC2012, 2SC2013, 2SC2014, 2SC2017, 2SC2018, 2SC2019, BC556, 2SC2020, 2SC2021, 2SC2022, 2SC2023, 2SC2024, 2SC2025, 2SC2026, 2SC2027
