Биполярный транзистор 2SC202
Даташит. Аналоги
Наименование производителя: 2SC202
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.65
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.3
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 175
MHz
Ёмкость коллекторного перехода (Cc): 8
pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
TO5
Аналог (замена) для 2SC202
-
подбор ⓘ биполярного транзистора по параметрам
2SC202
Datasheet (PDF)
0.7. Size:23K sanken-ele
2sc2023.pdf 
2SC2023Silicon NPN Triple Diffused Planar TransistorApplication : Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) (Ta=25C)Symbol 2SC2023 Symbol Conditions 2SC2023Unit Unit0.24.80.210.20.12.0VCBO 300 ICBO VCB=300V 1.0maxV mAVCEO 300 IEBO VEB=6V 1.0maxV mAVEBO 6
0.8. Size:184K inchange semiconductor
2sc2022.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2022DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
0.9. Size:184K inchange semiconductor
2sc2023.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2023DESCRIPTIONSilicon NPN triple diffused planar transistorCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMU
0.10. Size:175K inchange semiconductor
2sc2026.pdf 
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2026DESCRIPTIONLow NoiseNF= 3.0dB TYP. @ f= 500MHzHigh Power GainG = 15dB TYP. @ f= 500MHzpeHigh Gain Bandwidth Productf = 2.0GHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise amplifiers in the VHF
0.11. Size:177K inchange semiconductor
2sc2027.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2027DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
0.12. Size:184K inchange semiconductor
2sc2028.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2028DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Другие транзисторы... 2SC2010
, 2SC2011
, 2SC2012
, 2SC2013
, 2SC2014
, 2SC2017
, 2SC2018
, 2SC2019
, BC639
, 2SC2020
, 2SC2021
, 2SC2022
, 2SC2023
, 2SC2024
, 2SC2025
, 2SC2026
, 2SC2027
.
History: DTC123ECA
| D45H11J3
| 2SA1720
| 2SC3102
| 2SC771
