Справочник транзисторов. 2SC2036

 

Биполярный транзистор 2SC2036 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2036
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: TO92

 Аналоги (замена) для 2SC2036

 

 

2SC2036 Datasheet (PDF)

 ..1. Size:207K  toshiba
2sc2036.pdf

2SC2036
2SC2036

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

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2sc2034.pdf

2SC2036

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2sc2063 2sc4039.pdf

2SC2036
2SC2036

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2sc2021 2sc4038.pdf

2SC2036
2SC2036

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2sc2063m 2sc4011.pdf

2SC2036
2SC2036

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2sc2021m 2sc4010.pdf

2SC2036
2SC2036

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2sc2075.pdf

2SC2036
2SC2036

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.6. Size:154K  toshiba
2sc2073a.pdf

2SC2036
2SC2036

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2sc2099.pdf

2SC2036
2SC2036

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2sc2068.pdf

2SC2036
2SC2036

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.9. Size:139K  toshiba
2sc2098.pdf

2SC2036
2SC2036

 9.10. Size:111K  sanyo
2sc2078.pdf

2SC2036
2SC2036

Ordering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier ApplicationsPackage Dimensionsunit:mm2010C[2SC2078]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 80 VCollector-to-Emitter Voltage VCE

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2sc2000.pdf

2SC2036

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2sc2001.pdf

2SC2036
2SC2036

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2sc2026.pdf

2SC2036

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2sc2002.pdf

2SC2036
2SC2036

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2sc2003.pdf

2SC2036
2SC2036

 9.16. Size:309K  rohm
2sc2021.pdf

2SC2036
2SC2036

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2sc2063.pdf

2SC2036
2SC2036

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2sc2058s.pdf

2SC2036
2SC2036

2SC5659 / 2SC4618 / 2SC4098 /Transistors 2SC2413 / 2SC2058SHigh-frequency Amplifier Transistor(25V, 50mA, 300MHz)2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K /2SC2058S Features External dimensions (Units : mm)1) Low collector capacitance. (Cob : Typ. 1.3pF)2SC56591.22) Low rbb, high gain, and excellent noise characteristics.0.2 0.8 0.2(2)(3)(1)(1) Base Absolute maximum

 9.19. Size:212K  mcc
2sc2001-m.pdf

2SC2036
2SC2036

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

 9.20. Size:212K  mcc
2sc2001-l.pdf

2SC2036
2SC2036

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

 9.21. Size:212K  mcc
2sc2001-k.pdf

2SC2036
2SC2036

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

 9.22. Size:80K  fuji
2sc2043.pdf

2SC2036
2SC2036

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2sc2028.pdf

2SC2036

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2sc2085.pdf

2SC2036

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2sc2060.pdf

2SC2036

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2sc2001.pdf

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2SC2036

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2sc2076.pdf

2SC2036

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2sc2091.pdf

2SC2036

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2sc2092.pdf

2SC2036

 9.30. Size:137K  sony
2sc2020.pdf

2SC2036
2SC2036

 9.31. Size:473K  secos
2sc2001.pdf

2SC2036
2SC2036

2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE(sat) G HhFE(IC=100mA)200(Typ) VCE(sat)(700mA)0.2V(Typ) EmitterJCollectorBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC2001-M 2S

 9.32. Size:502K  jiangsu
2sc2073.pdf

2SC2036
2SC2036

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150

 9.33. Size:5838K  jiangsu
2sc2060.pdf

2SC2036
2SC2036

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T 2SC2060 TRANSISTOR (NPN) TO-92L FEATURE 1. EMITTER Power Dissipation PCM: 0.75 W (Ta=25) 2. COLLECTOR Low Saturation Voltage (VCE(sat)=0.15V at 500mA) Complementary Pair with 2SA934 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value

 9.34. Size:797K  jiangsu
2sc2001.pdf

2SC2036
2SC2036

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR (NPN) TO-92 FEATURES High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) 1. EMITTER VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE Equivalent Circuit C2001=Device code Solid dot=Green molding compound device, XXX if none,the normal dev

 9.35. Size:23K  sanken-ele
2sc2023.pdf

2SC2036

2SC2023Silicon NPN Triple Diffused Planar TransistorApplication : Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) (Ta=25C)Symbol 2SC2023 Symbol Conditions 2SC2023Unit Unit0.24.80.210.20.12.0VCBO 300 ICBO VCB=300V 1.0maxV mAVCEO 300 IEBO VEB=6V 1.0maxV mAVEBO 6

 9.36. Size:218K  lge
2sc2073.pdf

2SC2036
2SC2036

2SC2073(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Paramenter Value UnitsVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC C

 9.37. Size:287K  lge
2sc2060 to-92mod.pdf

2SC2036
2SC2036

2SC2060 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features8.400 Power dissipation PCM: 0.75 W (Tamb=25) 8.800 Low saturation voltage (VCE(sat)=0.15V at 500mA) 0.9001.100Complementary pair with 2SA934 0.4000.60013.80014.2001.500 TYPMAXIMUM RATINGS* TA=25 unless otherwise noted 2.900Dimensions in i

 9.38. Size:303K  lge
2sc2060.pdf

2SC2036
2SC2036

2SC2060 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.8008.200 Power dissipation PCM: 0.75 W (Tamb=25) Low saturation voltage (VCE(sat)=0.15V at 500mA) 0.6000.800Complementary pair with 2SA934 0.3500.55013.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 14.200Symbol Parameter Value UnitsVCBO

 9.39. Size:226K  lge
2sc2001.pdf

2SC2036
2SC2036

2SC2001(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base V

 9.40. Size:632K  semtech
st2sc2073u.pdf

2SC2036
2SC2036

ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 APeak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W To

 9.41. Size:221K  foshan
2sc2073a 3da2073a.pdf

2SC2036
2SC2036

2SC2073A(3DA2073A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940A(3CA940A) Features: Wide Safe Operating Area, complementary to 2SA940A(3CA940A). /Absolute maximum ratings(Ta=25)

 9.42. Size:215K  foshan
2sc2073 3da2073.pdf

2SC2036
2SC2036

2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940(3CA940) Features: Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25)

 9.43. Size:521K  slkor
2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf

2SC2036

2SC2078Silicon NPN POWER TRANSISTORDESCRIPTIONB FSEATINGT PLANEC 4Designed primarily for SSB linear powerTSamplifier applicationsAQ1 2 3HFEATURESUKZ Specified 12.5V, 27MHz CharacteristicsL PO = 4W PEPV ft = 200 MHzSTYLE 1:RGPIN 1. BASE2. COLLECTORJD3. EMITTERN4. COLLECTORDIMENSIONSUNIT A B C D F G H J K L N Q R

 9.44. Size:1725K  jsmsemi
2sc2073.pdf

2SC2036
2SC2036

2SC2073NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1Base , 2SA940 1 PIN 2Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3Emitter / Applications

 9.45. Size:856K  cn evvo
2sc2073.pdf

2SC2036
2SC2036

2SC2073Silicon NPN transistor / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1Base , 2SA940 1 PIN 2Collector 2 3Wide Safe Operating Area, complementary to 2SA940. PIN 3Emitter / Applications

 9.46. Size:1293K  cn sps
2sc2073t1tl.pdf

2SC2036
2SC2036

2SC2073T1TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 150

 9.47. Size:421K  cn sptech
2sc2073.pdf

2SC2036
2SC2036

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBO

 9.48. Size:192K  inchange semiconductor
2sc2073.pdf

2SC2036
2SC2036

isc Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 9.49. Size:192K  inchange semiconductor
2sc2075.pdf

2SC2036
2SC2036

isc Silicon NPN Power Transistor 2SC2075DESCRIPTIONHigh transition frequencyWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS27MHz Power Amplifier ApplicationsRecommended for output stage applicationof AM 4W transmitterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

 9.50. Size:184K  inchange semiconductor
2sc2022.pdf

2SC2036
2SC2036

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2022DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 9.51. Size:213K  inchange semiconductor
2sc2085.pdf

2SC2036
2SC2036

isc Silicon NPN Power Transistors 2SC2085DESCRIPTIONCollector-Base Breakdown Voltage-: V = 300V(Min.)(BR)CBOLarge collector power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS1W output in class-A operationLine-operated AF amplifier chrominance outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 9.52. Size:184K  inchange semiconductor
2sc2023.pdf

2SC2036
2SC2036

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2023DESCRIPTIONSilicon NPN triple diffused planar transistorCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMU

 9.53. Size:175K  inchange semiconductor
2sc2026.pdf

2SC2036
2SC2036

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2026DESCRIPTIONLow NoiseNF= 3.0dB TYP. @ f= 500MHzHigh Power GainG = 15dB TYP. @ f= 500MHzpeHigh Gain Bandwidth Productf = 2.0GHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise amplifiers in the VHF

 9.54. Size:239K  inchange semiconductor
2sc2078.pdf

2SC2036
2SC2036

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150 Collector Current- :IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=15

 9.55. Size:177K  inchange semiconductor
2sc2027.pdf

2SC2036
2SC2036

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2027DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

 9.56. Size:184K  inchange semiconductor
2sc2028.pdf

2SC2036
2SC2036

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2028DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.57. Size:185K  inchange semiconductor
2sc2098.pdf

2SC2036
2SC2036

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2098DESCRIPTIONSilicon NPN epitaxial planar100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2098 is designed for 25=50MHz AF power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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