2SC2208 - описание и поиск аналогов

Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Unit mm 7.5+0.5 0.1 2.9 0.2 Complementary to 2SA0963 120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with 2SA0963 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.75 0.1 Collector-base

Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit mm Complementary to 2SA1254 2.5 0.1 6.9 0.1 (1.0) (1.5) (1.5) Features R 0.9 Optimum for RF amplification of FM/AM radios R 0.7 High transition frequency fT M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit

Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1254 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1

isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO High Collector Power Dissipation Complement to Type 2SA963 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU