Справочник транзисторов. 2SC2245

 

Биполярный транзистор 2SC2245 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2245
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 100 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 450 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO3

 Аналоги (замена) для 2SC2245

 

 

2SC2245 Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
2sc2245.pdf

2SC2245
2SC2245

isc Silicon NPN Power Transistor 2SC2245DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

 8.1. Size:112K  toshiba
2sc2242.pdf

2SC2245
2SC2245

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:347K  toshiba
2sc2240.pdf

2SC2245
2SC2245

2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplif

 8.3. Size:121K  jmnic
2sc2246.pdf

2SC2245
2SC2245

Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION High voltage ,high speed With TO-3 package APPLICATIONS Power switching Power amplification power driver PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

 8.4. Size:545K  jilin sino
2sc2240.pdf

2SC2245
2SC2245

NPN NPN Epitaxial Silicon Transistor R2SC2240(NPN) APPLICATIONS Low noise audio amplifier applications FEATURES V =120V (min) High collector voltageV =120V (min) CEO CEO 2SA970 Complementary 2SA970 High DC current gain

 8.5. Size:747K  blue-rocket-elect
2sc2240.pdf

2SC2245
2SC2245

2SC2240 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,,Low noise, high DC current gain, high breakdown voltage / Applications Low noise audio amplifier applications.

 8.6. Size:1288K  cn sps
2sc2246t3bl.pdf

2SC2245
2SC2245

2SC2246T3BLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITVV Collector-Base Voltage 450CBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 5 V

 8.7. Size:181K  cn sptech
2sc2246.pdf

2SC2245
2SC2245

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2246DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Switching SpeedAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITVV Collector-Base Voltage 1000CBOV Collector-Emitter Voltage 600 V

 8.8. Size:383K  cn haohai electr
2sc2246.pdf

2SC2245
2SC2245

2SC2246High Voltage Switching Power Transistor25A,800V QUICK REFERENCEPart Number Industry Part IC VCBO VCEO PDPackage Packing MarkingTO-32SC2246 2SC2246 25A 800V 600V 200W50PcsplywoodSilicon NPN Transistors NPN50

 8.9. Size:209K  inchange semiconductor
2sc2248.pdf

2SC2245
2SC2245

isc Silicon NPN Power Transistor 2SC2248DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

 8.10. Size:191K  inchange semiconductor
2sc2242.pdf

2SC2245
2SC2245

isc Silicon NPN Power Transistor 2SC2242DESCRIPTIONHigh Breakdown Voltage-: V = 300V(Min)(BR)CBOHigh Current-GainBandwidth Product-: f = 20MHz(Min)@I = 20mAT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsColor TV sound output applicationsRecommended for sound output stage in line

 8.11. Size:208K  inchange semiconductor
2sc2247.pdf

2SC2245
2SC2245

isc Silicon NPN Power Transistor 2SC2247DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

 8.12. Size:208K  inchange semiconductor
2sc2244.pdf

2SC2245
2SC2245

isc Silicon NPN Power Transistor 2SC2244DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

 8.13. Size:187K  inchange semiconductor
2sc2246.pdf

2SC2245
2SC2245

isc Silicon NPN Power Transistor 2SC2246DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

 8.14. Size:207K  inchange semiconductor
2sc2243.pdf

2SC2245
2SC2245

isc Silicon NPN Power Transistor 2SC2243DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL PARAMETER MAXV Collector-Base V

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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