2SC2246 datasheet, аналоги, основные параметры
Наименование производителя: 2SC2246 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO3
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2SC2246 даташит
..1. Size:121K jmnic
2sc2246.pdf 
Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION High voltage ,high speed With TO-3 package APPLICATIONS Power switching Power amplification power driver PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
..2. Size:181K cn sptech
2sc2246.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2246 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 600V (Min) CEO(SUS) High Switching Speed APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V V Collector-Base Voltage 1000 CBO V Collector-Emitter Voltage 600 V
..3. Size:383K cn haohai electr
2sc2246.pdf 
2SC2246 High Voltage Switching Power Transistor 25A,800V QUICK REFERENCE Part Number Industry Part IC VCBO VCEO PD Package Packing Marking TO-3 2SC2246 2SC2246 25A 800V 600V 200W 50Pcs plywood Silicon NPN Transistors NPN 50
..4. Size:187K inchange semiconductor
2sc2246.pdf 
isc Silicon NPN Power Transistor 2SC2246 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
0.1. Size:1288K cn sps
2sc2246t3bl.pdf 
2SC2246T3BL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V V Collector-Base Voltage 450 CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 5 V
8.1. Size:112K toshiba
2sc2242.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:347K toshiba
2sc2240.pdf 
2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplif
8.4. Size:747K blue-rocket-elect
2sc2240.pdf 
2SC2240 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , , Low noise, high DC current gain, high breakdown voltage / Applications Low noise audio amplifier applications.
8.5. Size:209K inchange semiconductor
2sc2248.pdf 
isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
8.6. Size:191K inchange semiconductor
2sc2242.pdf 
isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION High Breakdown Voltage- V = 300V(Min) (BR)CBO High Current-Gain Bandwidth Product- f = 20MHz(Min)@I = 20mA T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Color TV sound output applications Recommended for sound output stage in line
8.7. Size:208K inchange semiconductor
2sc2247.pdf 
isc Silicon NPN Power Transistor 2SC2247 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
8.8. Size:208K inchange semiconductor
2sc2244.pdf 
isc Silicon NPN Power Transistor 2SC2244 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
8.9. Size:207K inchange semiconductor
2sc2243.pdf 
isc Silicon NPN Power Transistor 2SC2243 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL PARAMETER MAX V Collector-Base V
8.10. Size:208K inchange semiconductor
2sc2245.pdf 
isc Silicon NPN Power Transistor 2SC2245 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
Другие транзисторы: 2SC2240, 2SC2240BL, 2SC2240GR, 2SC2241, 2SC2242, 2SC2243, 2SC2244, 2SC2245, MJE340, 2SC2247, 2SC2248, 2SC2249, 2SC225, 2SC2250, 2SC2251, 2SC2252, 2SC2253
