Биполярный транзистор 2SC2271D
Даташит. Аналоги
Наименование производителя: 2SC2271D
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.9
W
Макcимально допустимое напряжение коллектор-база (Ucb): 300
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 50
MHz
Ёмкость коллекторного перехода (Cc): 7.5
pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
TO92
Аналог (замена) для 2SC2271D
-
подбор ⓘ биполярного транзистора по параметрам
2SC2271D
Datasheet (PDF)
8.1. Size:94K toshiba
2sc2270.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.5. Size:78K secos
2sc2274.pdf 
2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Breakdown Voltage G H High Current Low Saturation Voltage EmitterJCollectorBase A DBCLASSIFICATION OF hFE(1) Millimeter REF.Min. Max.KProduct-Rank 2SC2274-D
8.6. Size:156K jmnic
2sc2275.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYM
8.7. Size:175K foshan
2sc2275-a 3da2275-a.pdf 
2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications. :, 2SA985(3CA985)/2SA985A(3CA985A) Features: Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25)
8.8. Size:198K inchange semiconductor
2sc2275.pdf 
isc Silicon NPN Power Transistor 2SC2275DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA985Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsHigh frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(
8.9. Size:125K inchange semiconductor
2sc2275 2sc2275a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rating
8.10. Size:216K inchange semiconductor
2sc2270.pdf 
isc Silicon NPN Power Transistor 2SC2270DESCRIPTIONHigh Collector Power DissipationP =10W(Tc=25), P =1.0W(Ta=25)C CHigh DC Current Gain: h =140~450@V =2V,I =0.5AFE CE Ch =70(Min)@V =2V,I =4AFE CE CLow Collector Saturation VoltageV =1.0V(Max)@I =4A,I 0.1ACE(sat) C B=Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLIC
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