Биполярный транзистор 2SC2292 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2292
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
2SC2292 Datasheet (PDF)
2sc2292.pdf
isc Silicon NPN Power Transistor 2SC2292DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
2sc2290.pdf
2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (
2sc2295.pdf
Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag
2sc2295 e.pdf
Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag
2sc2295.pdf
SMD Type TransistorsNPN Transistors2SC2295SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High transition frequency fT. Complementary to 2SA10221 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volt
2sc2290a.pdf
HG RF POWER TRANSISTOR2SC2290ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR Spec ified 12.5, 28MHz Ch aracteristicV s Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collect Efficiency : = 35% (Min.) or C_30dB Intermodulation Distortion IMD = (M ax .) : MAXIMUM RATINGS (Tc = 25C)CHARACTERISTIC SYMBOL RATING UNIT Colle
2sc2293.pdf
isc Silicon NPN Power Transistor 2SC2293DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
Другие транзисторы... 2SC2287M , 2SC2288 , 2SC2288M , 2SC2289 , 2SC2289M , 2SC229 , 2SC2290 , 2SC2291 , 2SA1943 , 2SC2293 , 2SC2294 , 2SC2295 , 2SC2296 , 2SC2297 , 2SC2298 , 2SC2298A , 2SC2298B .
