2SC23 datasheet и подбор замены

 0.1. Size:291K  toshiba
 2sc2347.pdf 

2SC2347 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications Unit mm TV VHF Mixer Applications Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Emitter current IE -50 mA Collector power

 0.2. Size:140K  toshiba
 2sc2395.pdf 

 0.3. Size:293K  toshiba
 2sc2349.pdf 

2SC2349 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2349 TV VHF Oscillator Applications Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Emitter current IE -50 mA Collector power dissipation PC 250 mW Junct

 0.4. Size:140K  toshiba
 2sc2383.pdf 

2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Unit mm Color TV Class-B Sound Output Applications High breakdown voltage VCEO = 160 V Large continuous collector current capability Recommended for vertical deflection output & sound output applications for line-operated TVs. Complem

 0.5. Size:85K  sanyo
 2sc2314.pdf 

 0.6. Size:55K  sanyo
 2sa1016 2sc2362 2sc2362k.pdf 

Ordering number ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter ( ) 2SA1016, 1016K 2 Collecor 3 Base Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta = 25 C 2SA101

 0.7. Size:42K  sanyo
 2sa1011 2sc2344.pdf 

Ordering number ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit mm 2010C [2SA1011/2SC2344] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 2 3 1 Base ( ) 2SA1011 2 Collector 3 Emitter 2.55 2.55 Specifications SANYO TO220AB Absolute Maximum Ratings at Ta = 2

 0.8. Size:116K  nec
 2sc2334.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SC2334 TO-220AB FEATURES Low c

 0.9. Size:118K  nec
 2sc2335.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such Part No. Package as switching regulators, DC/DC converters, and high-frequency power 2SC2335 TO-220AB amplif

 0.10. Size:171K  nec
 2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf 

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a

 0.11. Size:36K  nec
 2sc2352.pdf 

 0.12. Size:32K  nec
 2sc2368.pdf 

 0.13. Size:194K  nec
 2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf 

This Material Copyrighted By Its Respective Manufacturer

 0.14. Size:265K  nec
 2sc2331.pdf 

 0.15. Size:37K  nec
 2sc2353.pdf 

 0.16. Size:30K  nec
 2sc2351.pdf 

DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES NF 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS (Units mm) MAG 14 dB TYP. @ f = 1.0 GHz 2.8 0.2 +0.1 1.5 0.65-0.15 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 25 V 2 Collector to Emitter Voltage VCEO 12 V Emitter to B

 0.17. Size:32K  nec
 2sc2369.pdf 

 0.18. Size:164K  nec
 2sc2333.pdf 

 0.19. Size:67K  rohm
 2sc4102 2sc3906k 2sc2389s.pdf 

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25 C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V C

 0.20. Size:268K  mcc
 2sc2383-r.pdf 

2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone (818) 701-4933 2SC2383-Y Fax (818) 701-4939 Features Capable of 0.9Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Collector-base Voltage 160V Plastic-Encapsulate Operating and storage junction temperature range -55O

 0.21. Size:268K  mcc
 2sc2383-o.pdf 

2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone (818) 701-4933 2SC2383-Y Fax (818) 701-4939 Features Capable of 0.9Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Collector-base Voltage 160V Plastic-Encapsulate Operating and storage junction temperature range -55O

 0.22. Size:268K  mcc
 2sc2383-y.pdf 

2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone (818) 701-4933 2SC2383-Y Fax (818) 701-4939 Features Capable of 0.9Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Collector-base Voltage 160V Plastic-Encapsulate Operating and storage junction temperature range -55O

 0.23. Size:769K  mcc
 2sc2383p.pdf 

2SC2383P Electrical Characteristics @ TA=25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=100 A, IE=0 Collector-Base Breakdown Voltage 160 V V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 160 V V(BR)EBO IE=10 A, IC=0 Emitter-Base Breakdown Voltage 6 V ICBO VCB=150V, IE=0 Collector-Base Cutoff Current 1 A IEBO VEB=6V, IC=0

 0.24. Size:110K  panasonic
 2sc2377.pdf 

Transistors 2SC2377 Silicon NPN epitaxial planar type For high-frequency amplification Unit mm 2.5 0.1 6.9 0.1 (1.0) (1.5) Features (1.5) Optimum for RF amplification of FM/AM radios High transition frequency fT R 0.9 M type package allowing easy automatic and manual insertion R 0.7 as well as stand-alone fixing to the printed circuit board (0.85) Absolute

 0.25. Size:62K  panasonic
 2sc2377 e.pdf 

Transistor 2SC2377 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Max

 0.26. Size:113K  utc
 2sc2328a.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2328AL-x-T92-B 2SC2328AG-x-T92-B TO-92 E C B Tape Box 2SC2328AL-x-T92-K 2SC2328AG-x-T9

 0.27. Size:65K  utc
 2sc2383.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC2383 Preliminary NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT & COLOR TV VERTICAL OUTPUT DESCRIPTION The UTC 2SC2383 is an NPN epitaxial silicon transistor, it uses UTC s advanced technology to provide customers high DC current gain and high breakdown voltage. The UTC 2SC2383 is usually used in Color TV Vertical Deflection Output

 0.28. Size:237K  fuji
 2sc2356.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.29. Size:23K  hitachi
 2sc2309.pdf 

2SC2309 Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2309 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction t

 0.30. Size:41K  hitachi
 2sc2310 2sc458.pdf 

2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emit

 0.31. Size:24K  hitachi
 2sc2396 2sc2543 2sc2544.pdf 

2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC2396 2SC2543 2SC2544 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter voltage V

 0.32. Size:33K  hitachi
 2sc2324.pdf 

2SC2324(K) Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current IC 1A Collector peak current IC(peak) 2A Collecto

 0.33. Size:27K  hitachi
 2sc458 2sc2308.pdf 

2SC458, 2SC2308 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO

 0.34. Size:106K  mospec
 2sc2373.pdf 

A A A

 0.35. Size:131K  mospec
 2sc2335.pdf 

A A A

 0.36. Size:99K  savantic
 2sc2331.pdf 

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fi

 0.37. Size:158K  savantic
 2sc2333.pdf 

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25

 0.38. Size:71K  secos
 2sc2383.pdf 

2SC2383 1A , 160V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 1 2 3 B C A CLASSIFICATION OF hFE E E C Product-Rank 2SC2383-O 2SC2383-Y Range 100 200 160 320 B D F G H K Collector PACKAGE INFORMATI

 0.39. Size:97K  advanced-semi
 2sc2367.pdf 

2SC2367 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION The ASI 2SC2367 is Designed for general purpose and small signal PACKAGE STYLE .100 4L PILL amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE High frequency 8.0 GH Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 C TJ

 0.40. Size:111K  jiangsu
 2sc2389s.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC2389S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Breakdown Voltage. 3. BASE Complements the 2SA1038S. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V

 0.41. Size:3737K  jiangsu
 2sc2383.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors JC T TO-92MOD 2SC2383 TRANSISTOR (NPN) FEATURE 1. EMITTER High Voltage VCEO=160V 2. COLLECTOR Large Continuous Collector Current Capability Complementary to 2SA1013 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base

 0.42. Size:148K  jmnic
 2sc2307.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC2307 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX

 0.43. Size:176K  jmnic
 2sc2334.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSO

 0.44. Size:177K  jmnic
 2sc2373.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC2373 DESCRIPTION With TO-220 package Low collector saturation voltage Fast switching time APPLICATIONS For use in horizontal deflection output for B/W TV applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAME

 0.45. Size:205K  jmnic
 2sc2335.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC2335 DESCRIPTION With TO-220C package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0 s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching in inductive cir

 0.46. Size:332K  jmnic
 2sc2365.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2365 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB

 0.47. Size:45K  jmnic
 2sc2331.pdf 

Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig

 0.48. Size:248K  jmnic
 2sc2333.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARA

 0.49. Size:196K  jmnic
 2sc2336.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emi

 0.50. Size:99K  jmnic
 2sc2305.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2305 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide safe operating area APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol

 0.51. Size:208K  jmnic
 2sc2344.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC2344 DESCRIPTION With TO-220 package Complement to type 2SA1011 APPLICATIONS High voltage switching Audio frequency power amplifier; 100W output predriver applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Ab

 0.52. Size:145K  jmnic
 2sc2371.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC2371 DESCRIPTION With TO-126 package High Voltage High frequency APPLICATIONS For TV chroma output and vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

 0.53. Size:72K  sanken-ele
 2sc2315 2sc2316.pdf 

 0.54. Size:260K  lge
 2sc2383 to-92l.pdf 

2SC2383 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 High voltage VCEO=160V 0.600 0.800 Large continuous collector current capability Complementary to 2SA1013 0.350 0.550 13.800 14.200 1.270 TYP Dimensions in inches and (millimeters) 2.440 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.640 0.

 0.55. Size:290K  lge
 2sc2383.pdf 

2SC2383 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE 5.800 Features 6.200 High voltage VCEO=160V 8.400 8.800 Large continuous collector current capability 0.900 Complementary to 2SA1013 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25 unless otherwis

 0.56. Size:1096K  blue-rocket-elect
 2sc2383t.pdf 

 0.57. Size:866K  blue-rocket-elect
 2sc2383.pdf 

 0.58. Size:902K  kexin
 2sc2351.pdf 

SMD Type Transistors NPN Transistors 2SC2351 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto

 0.59. Size:1180K  kexin
 2sc2383.pdf 

SMD Type Transistors NPN Transistors 2SC2383 1.70 0.1 Features High voltage VCEO=160V Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

 0.60. Size:232K  foshan
 2sc2344 3da2344.pdf 

2SC2344(3DA2344) NPN /SILICON NPN TRANSISTOR 100W Purpose High voltage switching, AF power amplifier, 100W output predriver applications. 2SA1011(3CA1011) Features complementary pair with 2SA1011(3CA1011). /Absolute maximum ratings(Ta=25 )

 0.61. Size:3615K  slkor
 2sc2383-o 2sc2383-y.pdf 

2SC2383 NPN Transistors Features Excellent h characteristics FE 3 2 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Base Current IB 0.5 A Collector Power

 0.62. Size:431K  cn yfw
 2sc2383-o 2sc2383-y.pdf 

2SC2383 SOT-89 NPN Transistors 3 Features 2 Small Flat Package 1.Base 1 General Purpose Application 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 1

 0.63. Size:176K  cn sptech
 2sc2334m 2sc2334l 2sc2334k.pdf 

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSOLUTE MAXIMUM R

 0.64. Size:189K  inchange semiconductor
 2sc2337.pdf 

isc Silicon NPN Power Transistor 2SC2337 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = 130V(Min.) (BR)CEO Complement to Type 2SA1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 0.65. Size:196K  inchange semiconductor
 2sc2307.pdf 

isc Silicon NPN Power Transistor 2SC2307 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

 0.66. Size:215K  inchange semiconductor
 2sc2334.pdf 

isc Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and h

 0.67. Size:222K  inchange semiconductor
 2sc2373.pdf 

isc Silicon NPN Power Transistor 2SC2373 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 5A, I = 0.5A CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output for B/W

 0.68. Size:203K  inchange semiconductor
 2sc2335.pdf 

isc Silicon NPN Power Transistor 2SC2335 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 3A, I = 0.6A CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed switching in

 0.69. Size:201K  inchange semiconductor
 2sc2335f.pdf 

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION With TO-220F package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0 s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching

 0.70. Size:184K  inchange semiconductor
 2sc2316.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2316 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 0.71. Size:177K  inchange semiconductor
 2sc2358.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2358 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO

 0.72. Size:194K  inchange semiconductor
 2sc2314.pdf 

isc Silicon NPN Power Transistor 2SC2314 DESCRIPTION Collector-Emitter Voltage- V = 75V(Min) ;R =150 CER BE Collector Current- I =1.5A C Low Saturation Voltage V =0.6V(MAX)@ IC=0.5A CE(sat) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 0.73. Size:189K  inchange semiconductor
 2sc2365.pdf 

isc Silicon NPN Power Transistor 2SC2365 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 6

 0.74. Size:184K  inchange semiconductor
 2sc2361.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 0.75. Size:223K  inchange semiconductor
 2sc2331.pdf 

isc Silicon NPN Power Transistor 2SC2331 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@ I = 1A CE(sat) C Fast Switching Speed Complement to Type 2SA1008 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency pow

 0.76. Size:106K  inchange semiconductor
 2sc2351.pdf 

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Col

 0.77. Size:155K  inchange semiconductor
 2sc2336 2sc2336a 2sc2336b.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

 0.78. Size:221K  inchange semiconductor
 2sc2333.pdf 

isc Silicon NPN Power Transistor 2SC2333 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Speed Switching Low Collector Saturation Voltage Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and ultrasonic appliance appli

 0.79. Size:198K  inchange semiconductor
 2sc2336.pdf 

isc Silicon NPN Power Transistor 2SC2336 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1006 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAX

 0.80. Size:175K  inchange semiconductor
 2sc2383.pdf 

INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2383 DESCRIPTION High breakdown voltage Low output capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV class B sound output applications Color TV vert.deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 0.81. Size:187K  inchange semiconductor
 2sc2305.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2305 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO

 0.82. Size:222K  inchange semiconductor
 2sc2344.pdf 

isc Silicon NPN Power Transistor 2SC2344 DESCRIPTION Low Collector Saturation Voltage- V = 0.3V(Typ.)@ I = 0.5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 160V(Min.) (BR)CEO Complement to Type 2SA1011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, audio frequency power amplif

 0.83. Size:210K  inchange semiconductor
 2sc2371.pdf 

isc Silicon NPN Power Transistor 2SC2371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for video applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO V C

 0.84. Size:178K  inchange semiconductor
 2sc2304.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2304 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO