Биполярный транзистор 2SC2305 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2305
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO218
2SC2305 Datasheet (PDF)
2sc2305.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2305 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide safe operating area APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol
2sc2305.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2305DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBO
2sc2309.pdf
2SC2309Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2309Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 200 mWJunction t
2sc458 2sc2308.pdf
2SC458, 2SC2308Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458, 2SC2308Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 2SC2308 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO
2sc2307.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2307 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS MAX
2sc2307.pdf
isc Silicon NPN Power Transistor 2SC2307DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
2sc2304.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2304DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBO
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050