2SC2316Y - Даташиты. Аналоги. Основные параметры

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2316 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emit

isc Silicon NPN Power Transistor 2SC2314 DESCRIPTION Collector-Emitter Voltage- V = 75V(Min) ;R =150 CER BE Collector Current- I =1.5A C Low Saturation Voltage V =0.6V(MAX)@ IC=0.5A CE(sat) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM