Справочник транзисторов. 2SC2320L

 

Биполярный транзистор 2SC2320L - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC2320L

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.2 A

Предельная температура PN-перехода (Tj): 175 °C

Граничная частота коэффициента передачи тока (ft): 200 MHz

Ёмкость коллекторного перехода (Cc): 2.5 pf

Статический коэффициент передачи тока (hfe): 800

Корпус транзистора: TO92

Аналоги (замена) для 2SC2320L

 

 

2SC2320L Datasheet (PDF)

8.1. 2sc2328a.pdf Size:113K _utc

2SC2320L 2SC2320L

UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2328AL-x-T92-B 2SC2328AG-x-T92-B TO-92 E C B Tape Box2SC2328AL-x-T92-K 2SC2328AG-x-T9

8.2. 2sc2324.pdf Size:33K _hitachi

2SC2320L 2SC2320L

2SC2324(K)Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. Emitter2. Collector3. Base1231Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current IC 1ACollector peak current IC(peak) 2ACollecto

 9.1. 2sc2347.pdf Size:291K _toshiba

2SC2320L 2SC2320L

2SC2347 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications Unit: mm TV VHF Mixer Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mAEmitter current IE -50 mACollector power

9.2. 2sc2349.pdf Size:293K _toshiba

2SC2320L 2SC2320L

2SC2349 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2349 TV VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mAEmitter current IE -50 mACollector power dissipation PC 250 mWJunct

 9.3. 2sc2395.pdf Size:140K _toshiba

2SC2320L 2SC2320L

9.4. 2sc2383.pdf Size:140K _toshiba

2SC2320L 2SC2320L

2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Unit: mmColor TV Class-B Sound Output Applications High breakdown voltage: VCEO = 160 V Large continuous collector current capability Recommended for vertical deflection output & sound output applications for line-operated TVs. Complem

 9.5. 2sa1011 2sc2344.pdf Size:42K _sanyo

2SC2320L 2SC2320L

Ordering number:ENN544GPNP/NPN Epitaxial Planar Silicon Transistors2SA1011/2SC2344High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsPackage Dimensionsunit:mm2010C[2SA1011/2SC2344]10.24.53.65.11.31.20.80.41 2 31 : Base( ) : 2SA10112 : Collector3 : Emitter2.55 2.55SpecificationsSANYO : TO220ABAbsolute Maximum Ratings at Ta = 2

9.6. 2sa1016 2sc2362 2sc2362k.pdf Size:55K _sanyo

2SC2320L 2SC2320L

Ordering number:ENN572EPNP/NPN Epitaxial Planar Silicon Transistors2SA1016, 1016K/2SC2362, 2362KHigh-Voltage Low-Noise Amp ApplicationsPackage Dimensionsunit:mm2003B[2SA1016, 1016K/2SC2362, 2362K]5.04.04.00.450.50.440.451 2 31 : Emitter( ) : 2SA1016, 1016K 2 : Collecor3 : BaseSpecifications 1.3 1.3SANYO : NPAbsolute Maximum Ratings at Ta = 25C2SA101

9.7. 2sc2314.pdf Size:85K _sanyo

2SC2320L 2SC2320L

9.8. 2sc2333.pdf Size:164K _nec

2SC2320L 2SC2320L

9.9. 2sc2351.pdf Size:30K _nec

2SC2320L 2SC2320L

DATA SHEETSILICON TRANSISTOR2SC2351HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURES NF 1.5 dB TYP. @ f = 1.0 GHzPACKAGE DIMENSIONS(Units: mm) MAG 14 dB TYP. @ f = 1.0 GHz2.80.2+0.11.50.65-0.15ABSOLUTE MAXIMUM RATINGS (TA = 25 C)Collector to Base Voltage VCBO 25 V2Collector to Emitter Voltage VCEO 12 VEmitter to B

9.10. 2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf Size:194K _nec

2SC2320L 2SC2320L

This Material Copyrighted By Its Respective Manufacturer

9.11. 2sc2352.pdf Size:36K _nec

2SC2320L

9.12. 2sc2369.pdf Size:32K _nec

2SC2320L

9.13. 2sc2335.pdf Size:118K _nec

2SC2320L 2SC2320L

DATA SHEETSILICON POWER TRANSISTOR2SC2335NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATIONhigh-voltage switching, and is ideal for use as a driver in devices suchPart No. Packageas switching regulators, DC/DC converters, and high-frequency power2SC2335 TO-220ABamplif

9.14. 2sc2334.pdf Size:116K _nec

2SC2320L 2SC2320L

DATA SHEETSILICON POWER TRANSISTOR2SC2334NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SC2334 TO-220ABFEATURES Low c

9.15. 2sc2331.pdf Size:265K _nec

2SC2320L 2SC2320L

9.16. 2sc2353.pdf Size:37K _nec

2SC2320L

9.17. 2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf Size:171K _nec

2SC2320L 2SC2320L

NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a

9.18. 2sc2368.pdf Size:32K _nec

2SC2320L

9.19. 2sc4102 2sc3906k 2sc2389s.pdf Size:67K _rohm

2SC2320L 2SC2320L

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VC

9.20. 2sc2383-o.pdf Size:268K _mcc

2SC2320L 2SC2320L

2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O

9.21. 2sc2383-r.pdf Size:268K _mcc

2SC2320L 2SC2320L

2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O

9.22. 2sc2383-y.pdf Size:268K _mcc

2SC2320L 2SC2320L

2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O

9.23. 2sc2377.pdf Size:110K _panasonic

2SC2320L 2SC2320L

Transistors2SC2377Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mm2.50.16.90.1(1.0)(1.5) Features(1.5) Optimum for RF amplification of FM/AM radios High transition frequency fT R 0.9 M type package allowing easy automatic and manual insertion R 0.7as well as stand-alone fixing to the printed circuit board(0.85) Absolute

9.24. 2sc2377 e.pdf Size:62K _panasonic

2SC2320L 2SC2320L

Transistor2SC2377Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Optimum for RF amplification of FM/AM radios.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Max

9.25. 2sc2383.pdf Size:65K _utc

2SC2320L 2SC2320L

UNISONIC TECHNOLOGIES CO., LTD 2SC2383 Preliminary NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT & COLOR TV VERTICAL OUTPUT DESCRIPTION The UTC 2SC2383 is an NPN epitaxial silicon transistor, it uses UTCs advanced technology to provide customers high DC current gain and high breakdown voltage. The UTC 2SC2383 is usually used in Color TV Vertical Deflection Output

9.26. 2sc2356.pdf Size:237K _fuji

2SC2320L 2SC2320L

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.27. 2sc2396 2sc2543 2sc2544.pdf Size:24K _hitachi

2SC2320L 2SC2320L

2SC2396, 2SC2543, 2SC2544Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1025, 2SA1081 and 2SA1082OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2396, 2SC2543, 2SC2544Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2396 2SC2543 2SC2544 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter voltage V

9.28. 2sc2309.pdf Size:23K _hitachi

2SC2320L 2SC2320L

2SC2309Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2309Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 200 mWJunction t

9.29. 2sc2310 2sc458.pdf Size:41K _hitachi

2SC2320L 2SC2320L

2SC458 (LG), 2SC2310Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458 (LG), 2SC2310Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 (LG) 2SC2310 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmit

9.30. 2sc458 2sc2308.pdf Size:27K _hitachi

2SC2320L 2SC2320L

2SC458, 2SC2308Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458, 2SC2308Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 2SC2308 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO

9.31. 2sc2335.pdf Size:131K _mospec

2SC2320L 2SC2320L

AAA

9.32. 2sc2373.pdf Size:106K _mospec

2SC2320L 2SC2320L

AAA

9.33. 2sc2333.pdf Size:158K _savantic

2SC2320L 2SC2320L

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base 3 Emitter Absolute maximum ratings(Ta=25

9.34. 2sc2331.pdf Size:99K _savantic

2SC2320L 2SC2320L

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fi

9.35. 2sc2383.pdf Size:71K _secos

2SC2320L

2SC2383 1A , 160V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 123B C ACLASSIFICATION OF hFE E ECProduct-Rank 2SC2383-O 2SC2383-Y Range 100~200 160~320 B DF GH KCollector PACKAGE INFORMATI

9.36. 2sc2367.pdf Size:97K _advanced-semi

2SC2320L

2SC2367NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI 2SC2367 is Designed for general purpose and small signal PACKAGE STYLE .100 4L PILL amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE: High frequency 8.0 GH Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 C TJ

9.37. 2sc2389s.pdf Size:111K _jiangsu

2SC2320L

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC2389S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Breakdown Voltage. 3. BASE Complements the 2SA1038S. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V

9.38. 2sc2336.pdf Size:196K _jmnic

2SC2320L 2SC2320L

JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Emi

9.39. 2sc2333.pdf Size:248K _jmnic

2SC2320L 2SC2320L

JMnic Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARA

9.40. 2sc2365.pdf Size:332K _jmnic

2SC2320L 2SC2320L

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC2365 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB

9.41. 2sc2335.pdf Size:205K _jmnic

2SC2320L 2SC2320L

JMnic Product Specification Silicon NPN Power Transistors 2SC2335 DESCRIPTION With TO-220C package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching in inductive cir

9.42. 2sc2334.pdf Size:176K _jmnic

2SC2320L 2SC2320L

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSO

9.43. 2sc2331.pdf Size:45K _jmnic

2SC2320L 2SC2320L

Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig

9.44. 2sc2307.pdf Size:148K _jmnic

2SC2320L 2SC2320L

JMnic Product Specification Silicon NPN Power Transistors 2SC2307 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS MAX

9.45. 2sc2373.pdf Size:177K _jmnic

2SC2320L 2SC2320L

JMnic Product Specification Silicon NPN Power Transistors 2SC2373 DESCRIPTION With TO-220 package Low collector saturation voltage Fast switching time APPLICATIONS For use in horizontal deflection output for B/W TV applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAME

9.46. 2sc2344.pdf Size:208K _jmnic

2SC2320L 2SC2320L

JMnic Product Specification Silicon NPN Power Transistors 2SC2344 DESCRIPTION With TO-220 package Complement to type 2SA1011 APPLICATIONS High voltage switching Audio frequency power amplifier; 100W output predriver applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 EmitterAb

9.47. 2sc2305.pdf Size:99K _jmnic

2SC2320L 2SC2320L

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2305 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide safe operating area APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol

9.48. 2sc2371.pdf Size:145K _jmnic

2SC2320L 2SC2320L

JMnic Product Specification Silicon NPN Power Transistors 2SC2371 DESCRIPTION With TO-126 package High Voltage High frequency APPLICATIONS For TV chroma output and vertical output applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter

9.49. 2sc2315 2sc2316.pdf Size:72K _sanken-ele

2SC2320L

9.50. 2sc2383.pdf Size:290K _lge

2SC2320L 2SC2320L

2SC2383 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 12. COLLECTOR 2 3 3. BASE 5.800Features6.200 High voltage: VCEO=160V 8.4008.800Large continuous collector current capability 0.900Complementary to 2SA1013 1.1000.4000.60013.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwis

9.51. 2sc2383 to-92l.pdf Size:260K _lge

2SC2320L 2SC2320L

2SC2383 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.8008.200 High voltage: VCEO=160V 0.6000.800 Large continuous collector current capability Complementary to 2SA1013 0.3500.55013.80014.2001.270 TYPDimensions in inches and (millimeters)2.440MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.6400.

9.52. 2sc2383t.pdf Size:938K _blue-rocket-elect

2SC2320L 2SC2320L

2SC2383T(BR3DG1383T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features V , 2SA1013T(BR3CG1013T)CEOHigh VCEO, complementary pair with 2SA1013T(BR3CG1013T). / Applications ,Color TV class B sound outpu

9.53. 2sc2351.pdf Size:902K _kexin

2SC2320L 2SC2320L

SMD Type TransistorsNPN Transistors2SC2351SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=12V 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto

9.54. 2sc2383.pdf Size:1180K _kexin

2SC2320L 2SC2320L

SMD Type TransistorsNPN Transistors2SC23831.70 0.1 Features High voltage: VCEO=160V Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

9.55. 2sc2344 3da2344.pdf Size:232K _foshan

2SC2320L 2SC2320L

2SC2344(3DA2344) NPN /SILICON NPN TRANSISTOR :100W Purpose: High voltage switching, AF power amplifier, 100W output predriver applications. : 2SA1011(3CA1011) Features: complementary pair with 2SA1011(3CA1011). /Absolute maximum ratings(Ta=25)

9.56. 2sc2336.pdf Size:198K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2336DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1006Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAX

9.57. 2sc2333.pdf Size:221K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2333DESCRIPTIONCollector-Emitter Sustaining Voltage-:V = 400V(Min)CEO(SUS)High Speed SwitchingLow Collector Saturation VoltageWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andultrasonic appliance appli

9.58. 2sc2336 2sc2336a 2sc2336b.pdf Size:155K _inchange_semiconductor

2SC2320L 2SC2320L

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

9.59. 2sc2351.pdf Size:106K _inchange_semiconductor

2SC2320L 2SC2320L

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Col

9.60. 2sc2383.pdf Size:175K _inchange_semiconductor

2SC2320L 2SC2320L

INCHANGE Semiconductorisc Silicon NPN Pow Transistor 2SC2383DESCRIPTIONHigh breakdown voltageLow output capacitanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV class B sound output applicationsColor TV vert.deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

9.61. 2sc2361.pdf Size:184K _inchange_semiconductor

2SC2320L 2SC2320L

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2361DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 70(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

9.62. 2sc2316.pdf Size:184K _inchange_semiconductor

2SC2320L 2SC2320L

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2316DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

9.63. 2sc2335f.pdf Size:201K _inchange_semiconductor

2SC2320L 2SC2320L

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION With TO-220F package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching

9.64. 2sc2365.pdf Size:189K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 6

9.65. 2sc2335.pdf Size:203K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2335DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 3A, I = 0.6ACE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed switching in

9.66. 2sc2334.pdf Size:215K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2334DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SA1010Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and h

9.67. 2sc2331.pdf Size:223K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2331DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.)@ I = 1ACE(sat) CFast Switching SpeedComplement to Type 2SA1008Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver in devices such as switchingregulators, DC/DC converters, and high-frequency pow

9.68. 2sc2307.pdf Size:196K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2307DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

9.69. 2sc2373.pdf Size:222K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2373DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 5A, I = 0.5ACE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output for B/W

9.70. 2sc2344.pdf Size:222K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2344DESCRIPTIONLow Collector Saturation Voltage-: V = 0.3V(Typ.)@ I = 0.5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOComplement to Type 2SA1011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, audio frequency poweramplif

9.71. 2sc2314.pdf Size:194K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2314DESCRIPTIONCollector-Emitter Voltage-:V = 75V(Min) ;R =150CER BECollector Current-:I =1.5ACLow Saturation Voltage: V =0.6V(MAX)@ IC=0.5ACE(sat)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

9.72. 2sc2304.pdf Size:178K _inchange_semiconductor

2SC2320L 2SC2320L

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2304DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBO

9.73. 2sc2358.pdf Size:177K _inchange_semiconductor

2SC2320L 2SC2320L

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2358DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBO

9.74. 2sc2305.pdf Size:187K _inchange_semiconductor

2SC2320L 2SC2320L

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2305DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBO

9.75. 2sc2371.pdf Size:210K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2371DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for video applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBOV C

9.76. 2sc2337.pdf Size:189K _inchange_semiconductor

2SC2320L 2SC2320L

isc Silicon NPN Power Transistor 2SC2337DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 130V(Min.)(BR)CEOComplement to Type 2SA1007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Другие транзисторы... 2SC2316 , 2SC2316O , 2SC2316Y , 2SC2317 , 2SC2318 , 2SC2319 , 2SC232 , 2SC2320 , TIP2955 , 2SC2321 , 2SC2322 , 2SC2323 , 2SC2324 , 2SC2324K , 2SC2325 , 2SC2326 , 2SC2327 .

 

 
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