Справочник транзисторов. 2SC2330Y

 

Биполярный транзистор 2SC2330Y - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2330Y
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TO92

 Аналоги (замена) для 2SC2330Y

 

 

2SC2330Y Datasheet (PDF)

 8.1. Size:116K  nec
2sc2334.pdf

2SC2330Y 2SC2330Y

DATA SHEETSILICON POWER TRANSISTOR2SC2334NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SC2334 TO-220ABFEATURES Low c

 8.2. Size:118K  nec
2sc2335.pdf

2SC2330Y 2SC2330Y

DATA SHEETSILICON POWER TRANSISTOR2SC2335NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATIONhigh-voltage switching, and is ideal for use as a driver in devices suchPart No. Packageas switching regulators, DC/DC converters, and high-frequency power2SC2335 TO-220ABamplif

 8.3. Size:194K  nec
2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf

2SC2330Y 2SC2330Y

This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:265K  nec
2sc2331.pdf

2SC2330Y 2SC2330Y

 8.5. Size:164K  nec
2sc2333.pdf

2SC2330Y 2SC2330Y

 8.6. Size:131K  mospec
2sc2335.pdf

2SC2330Y 2SC2330Y

AAA

 8.7. Size:99K  savantic
2sc2331.pdf

2SC2330Y 2SC2330Y

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fi

 8.8. Size:158K  savantic
2sc2333.pdf

2SC2330Y 2SC2330Y

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base 3 Emitter Absolute maximum ratings(Ta=25

 8.9. Size:176K  jmnic
2sc2334.pdf

2SC2330Y 2SC2330Y

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSO

 8.10. Size:205K  jmnic
2sc2335.pdf

2SC2330Y 2SC2330Y

JMnic Product Specification Silicon NPN Power Transistors 2SC2335 DESCRIPTION With TO-220C package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching in inductive cir

 8.11. Size:45K  jmnic
2sc2331.pdf

2SC2330Y 2SC2330Y

Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig

 8.12. Size:248K  jmnic
2sc2333.pdf

2SC2330Y 2SC2330Y

JMnic Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARA

 8.13. Size:196K  jmnic
2sc2336.pdf

2SC2330Y 2SC2330Y

JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Emi

 8.14. Size:176K  cn sptech
2sc2334m 2sc2334l 2sc2334k.pdf

2SC2330Y 2SC2330Y

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2334DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SA1010APPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency power am-plifiers.ABSOLUTE MAXIMUM R

 8.15. Size:189K  inchange semiconductor
2sc2337.pdf

2SC2330Y 2SC2330Y

isc Silicon NPN Power Transistor 2SC2337DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 130V(Min.)(BR)CEOComplement to Type 2SA1007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.16. Size:215K  inchange semiconductor
2sc2334.pdf

2SC2330Y 2SC2330Y

isc Silicon NPN Power Transistor 2SC2334DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SA1010Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and h

 8.17. Size:203K  inchange semiconductor
2sc2335.pdf

2SC2330Y 2SC2330Y

isc Silicon NPN Power Transistor 2SC2335DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 3A, I = 0.6ACE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed switching in

 8.18. Size:201K  inchange semiconductor
2sc2335f.pdf

2SC2330Y 2SC2330Y

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION With TO-220F package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching

 8.19. Size:223K  inchange semiconductor
2sc2331.pdf

2SC2330Y 2SC2330Y

isc Silicon NPN Power Transistor 2SC2331DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.)@ I = 1ACE(sat) CFast Switching SpeedComplement to Type 2SA1008Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver in devices such as switchingregulators, DC/DC converters, and high-frequency pow

 8.20. Size:155K  inchange semiconductor
2sc2336 2sc2336a 2sc2336b.pdf

2SC2330Y 2SC2330Y

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

 8.21. Size:221K  inchange semiconductor
2sc2333.pdf

2SC2330Y 2SC2330Y

isc Silicon NPN Power Transistor 2SC2333DESCRIPTIONCollector-Emitter Sustaining Voltage-:V = 400V(Min)CEO(SUS)High Speed SwitchingLow Collector Saturation VoltageWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andultrasonic appliance appli

 8.22. Size:198K  inchange semiconductor
2sc2336.pdf

2SC2330Y 2SC2330Y

isc Silicon NPN Power Transistor 2SC2336DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1006Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAX

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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