2SC2337 - описание и поиск аналогов

isc Silicon NPN Power Transistor 2SC2337 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = 130V(Min.) (BR)CEO Complement to Type 2SA1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SC2334 TO-220AB FEATURES Low c

DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such Part No. Package as switching regulators, DC/DC converters, and high-frequency power 2SC2335 TO-220AB amplif

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fi

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSO

JMnic Product Specification Silicon NPN Power Transistors 2SC2335 DESCRIPTION With TO-220C package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0 s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching in inductive cir

Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig

JMnic Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARA

JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emi

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and h

isc Silicon NPN Power Transistor 2SC2335 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 3A, I = 0.6A CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed switching in

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION With TO-220F package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0 s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching

isc Silicon NPN Power Transistor 2SC2331 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@ I = 1A CE(sat) C Fast Switching Speed Complement to Type 2SA1008 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency pow

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

isc Silicon NPN Power Transistor 2SC2333 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Speed Switching Low Collector Saturation Voltage Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and ultrasonic appliance appli

isc Silicon NPN Power Transistor 2SC2336 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1006 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAX