Справочник транзисторов. 2SC2337

 

Биполярный транзистор 2SC2337 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC2337

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 150 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 70 MHz

Ёмкость коллекторного перехода (Cc): 150 pf

Статический коэффициент передачи тока (hfe): 150

Корпус транзистора: TO3

Аналоги (замена) для 2SC2337

 

 

2SC2337 Datasheet (PDF)

1.1. 2sc2337.pdf Size:189K _inchange_semiconductor

2SC2337
2SC2337

isc Silicon NPN Power Transistor 2SC2337 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V = 130V(Min.) (BR)CEO ·Complement to Type 2SA1007 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

4.1. 2sc2335f.pdf Size:201K _update

2SC2337
2SC2337

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high- speed ,power switching

4.2. 2sc2333.pdf Size:164K _nec

2SC2337
2SC2337



 4.3. 2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf Size:194K _nec

2SC2337
2SC2337

 This Material Copyrighted By Its Respective Manufacturer

4.4. 2sc2335.pdf Size:118K _nec

2SC2337
2SC2337

DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such Part No. Package as switching regulators, DC/DC converters, and high-frequency power 2SC2335 TO-220AB amplif

 4.5. 2sc2334.pdf Size:116K _nec

2SC2337
2SC2337

DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SC2334 TO-220AB FEATURES • Low c

4.6. 2sc2331.pdf Size:265K _nec

2SC2337
2SC2337



4.7. 2sc2335.pdf Size:131K _mospec

2SC2337
2SC2337

A A A

4.8. 2sc2333.pdf Size:158K _savantic

2SC2337
2SC2337

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION ··With TO-220C package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·Switching regulator ·DC-DC converter ·Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25

4.9. 2sc2331.pdf Size:99K _savantic

2SC2337
2SC2337

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1008 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fi

4.10. 2sc2336.pdf Size:196K _jmnic

2SC2337
2SC2337

JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ·With TO-220 package ·Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emi

4.11. 2sc2333.pdf Size:248K _jmnic

2SC2337
2SC2337

JMnic Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION · ·With TO-220C package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·Switching regulator ·DC-DC converter ·Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARA

4.12. 2sc2335.pdf Size:205K _jmnic

2SC2337
2SC2337

JMnic Product Specification Silicon NPN Power Transistors 2SC2335 DESCRIPTION · ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high- speed ,power switching in inductive cir

4.13. 2sc2334.pdf Size:176K _jmnic

2SC2337
2SC2337

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC2334 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SA1010 APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSO

4.14. 2sc2331.pdf Size:45K _jmnic

2SC2337
2SC2337

Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1008 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig

4.15. 2sc2336.pdf Size:198K _inchange_semiconductor

2SC2337
2SC2337

isc Silicon NPN Power Transistor 2SC2336 DESCRIPTION ·Good Linearity of h FE ·High Collector-Emitter Breakdown Voltage- : V = 180V(Min) (BR)CEO ·Wide Area of Safe Operation ·Complement to Type 2SA1006 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAX

4.16. 2sc2333.pdf Size:221K _inchange_semiconductor

2SC2337
2SC2337

isc Silicon NPN Power Transistor 2SC2333 DESCRIPTION ·Collector-Emitter Sustaining Voltage- :V = 400V(Min) CEO(SUS) ·High Speed Switching ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic appliance appli

4.17. 2sc2336 2sc2336a 2sc2336b.pdf Size:155K _inchange_semiconductor

2SC2337
2SC2337

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ·With TO-220 package ·Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

4.18. 2sc2335f.pdf Size:201K _inchange_semiconductor

2SC2337
2SC2337

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high- speed ,power switching

4.19. 2sc2335.pdf Size:203K _inchange_semiconductor

2SC2337
2SC2337

isc Silicon NPN Power Transistor 2SC2335 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 400V(Min) CEO(SUS) ·Collector-Emitter Saturation Voltage- : V = 1.0V(Max)@ I = 3A, I = 0.6A CE(sat) C B ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching in

4.20. 2sc2334.pdf Size:215K _inchange_semiconductor

2SC2337
2SC2337

isc Silicon NPN Power Transistor 2SC2334 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SA1010 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and h

4.21. 2sc2331.pdf Size:223K _inchange_semiconductor

2SC2337
2SC2337

isc Silicon NPN Power Transistor 2SC2331 DESCRIPTION ·Low Collector Saturation Voltage- : V = 0.6V(Max.)@ I = 1A CE(sat) C ·Fast Switching Speed ·Complement to Type 2SA1008 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency pow

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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