Биполярный транзистор 2SC2378 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2378
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 125 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: TO92
2SC2378 Datasheet (PDF)
2sc2377.pdf
Transistors2SC2377Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mm2.50.16.90.1(1.0)(1.5) Features(1.5) Optimum for RF amplification of FM/AM radios High transition frequency fT R 0.9 M type package allowing easy automatic and manual insertion R 0.7as well as stand-alone fixing to the printed circuit board(0.85) Absolute
2sc2377 e.pdf
Transistor2SC2377Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Optimum for RF amplification of FM/AM radios.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Max
2sc2373.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2373 DESCRIPTION With TO-220 package Low collector saturation voltage Fast switching time APPLICATIONS For use in horizontal deflection output for B/W TV applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAME
2sc2371.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2371 DESCRIPTION With TO-126 package High Voltage High frequency APPLICATIONS For TV chroma output and vertical output applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter
2sc2373.pdf
isc Silicon NPN Power Transistor 2SC2373DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 5A, I = 0.5ACE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output for B/W
2sc2371.pdf
isc Silicon NPN Power Transistor 2SC2371DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for video applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBOV C
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
