High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.ROHM : VMT3(2) EmitterAbsolute maximum ratings (Ta=25C) (3) Collector

2SC2411KDatasheetMedium Power Transistor (32V, 500mA)lOutlinelParameter Value SMT3VCEO32VIC500mA2SC2411KSOT-346 lFeaturesl1) High ICMAX lInner circuitl ICMAX=0.5A2)Low VCE(sat) Optimal for low voltage operation.3)Complements the 2SA1036K.lApplicationlDRIVING CIRCUIT, LOW FREQ

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC40812. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029. 1.251.62.12.8Structure Epitaxial planar type 0.1Min.0.3Min.NPN silicon transistor Each lead has same dimensions Each lead

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

2SC2411KFRA2SC2411K TransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units : mm) 1) High ICMax.2SC2411KFRA2SC2411KICMax. = 0.5A2) Low VCE(sat).2.90.2Optimal for low voltage operation. 1.1+0.21.90.2 -0.10.80.10.95 0.952SA1036KFRA3) Complements the 2SA1036K. (1) (2)0 0.1(3)

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081U3 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA17

2SC2412K FRADatasheetGeneral purpose small signal amplifier(50V, 150mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO50VIC150mASMT3lFeatures lInner circuitl l1)Low Cob.Cob=2.0pF(Typ.)2)Complements the 2SA1037AK FRA.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIER

MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

2SC2412 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Cob, Cob=2.0pF AL Complements of the 2SA1037 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2412-Q 2SC2412-R 2SC2412-S Range 120~270 180~390 270~560 DMarking Code BQ B

2SC2411NPN TransistorElektronische BauelementePlastic-Encapsulate TransistorsA suffix of "-C" specifies halogen & lead-freeSOT-23 Dim Min Max Collector3A 2.800 3.040FEATURES1 B 1.200 1.400Base 2C 0.890 1.110nEmitterPower DissipationoD 0.370 0.500 PCM: 200 mW ( Tamb= 25 C)G 1.780 2.040AnRoHS Compliant ProductH 0.013 0.100LJ J 0.085 0.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2412 TRANSISTOR (NPN) FEATURES 1. BASE Low Cob ,Cob = 2.0 pF (Typ). 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEB

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2411 TRANSISTOR(NPN)1. BASEFEATURES 2. EMITTER3. COLLECTOR High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCE

www.jscj-elec.com AD-2SC2412 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-2SC2412 series Plastic-Encapsulated Transistor AD-2SC2412 series Transistor (NPN) FEATURES Low Cob ,Cob = 2.0 pF (Typ) AEC-Q101 qualified CLASSIFICATION of hFE Rank AD-2SC2412-Q AD-2SC2412-R AD-2SC2412-S Range 120-270 180-390 270-560 BQ BR BS Marking Version 1.0 1 /

2SC2412TRANSISTOR (NPN)SOT-23 FEATURES 1. BASE Low Cob ,Cob = 2.0 pF (Typ). 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissi

2SC2411SOT-23 TRANSISOR(NPN) 1. BASE 2. EMITTER FEATURES High ICMax.ICMax. = 0.5mA 3. COLLECTOR Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V Collector Current

2SC2411 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR FeaturesHigh ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 32

2SC2412 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -C

2SC2412K SOT-23-3L Transistor(NPN)1. BASE SOT-23-3L2. EMITTER 2.923. COLLECTOR 0.351.17Features Low Cob ,Cob = 2.0 pF (Typ). 2.80 1.60 Complements the 2SA1037AK MARKING : BQ, BR, BS 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-E

2SC2411KNPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO32 VVCBOCollector-Base Voltage 40 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 500 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t

2SC2412KNPN312SOT-23ValueV 50CEO607.01502001.6625T ,TstgJ 1.050 50 607.0 50u0.1I OVdc, E= E= 50 0 )u0.1 600.1 u7.0WEITRON1/5 24-Jul-07http://www.weitron.com.tw2SC2412KELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERISTICSDC Current GainhF

FM120-M WILLAS2SC2412KxLT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductNPN SiliconPackage outline We declare that the material of product compliance with RoHS requirements.Features Batch process design, excellent power dissipation offers better reverse leakage current and ther

FM120-M WILLAS2SC2411KxLT1THRUMedium Power TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN silicon

2SC2412K Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 1 2 PIN1Base PIN

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.L2SC2412KQMT1GS- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQMT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2412

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2412

LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SC2411KQLT1GNPN silicon SeriesFEATURES-L2SC2411KQLT1G Epitaxial planar typeSeries Complementary to L2SA1036K We declare that the material of product are Halogen Free and3compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQMT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2412

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2411KRLT1GFEATURESS-L2SC2411KRLT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT 23 DEVICE MARK

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.L2SC2412KQMT1GS- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQMT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2

L2SC2411KRLT1GS-L2SC2411KRLT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice Mark

SMD Type orSMD Type TransistICsNPN Transistors2SC2412 (2SC2412K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesLow Cob.Cob=2.0pF (Typ.)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base v

SMD Type ICSMD Type TransistorsGeneral Purpose Transistor2SC2412SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesLow Cob.Cob=2.0pF (Typ.)12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

SMD Type TransistorsNPN Transistors2SC2411 (2SC2411K)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.5A1 2 Low VCE(sat).Optimal for low voltage operation.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complements the 2SA1036/2SA1036K1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter

SMD Type ICSMD Type TransistorsGeneral Purpose Transistor2SC2412SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesLow Cob.Cob=2.0pF (Typ.)12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

SMD Type ICSMD Type TransistorsGeneral Purpose Transistor2SC2412SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesLow Cob.Cob=2.0pF (Typ.)12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

2SC2411KNPN GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE 32 Volts POWER 225mWFEATURES0.120(3.04) NPN epitaxial silicon,planar design0.110(2.80) Collector-emitter voltage VCE=32V Collector current IC=500mA Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free)0.056(1.40)0.047(1.20)MECHANICAL DAT

CHENMKO ENTERPRISE CO.,LTD2SC2411KGPSURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage V* Low cob. Cob=6.0pF(Typ.)CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)CONST

CHENMKO ENTERPRISE CO.,LTD2SC2412KGPSURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 AmpereAPPLICATION* Small Signal Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage VCE(sat)=-0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)CONST

CHENMKO ENTERPRISE CO.,LTD2SC2412WGPSURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 AmpereAPPLICATION* Small Signal Amplifier .FEATURE* Surface mount package. (SC-70/SOT-323)SC-70/SOT-323* Low saturation voltage VCE(sat)=-0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 150mW (mounted on ceramic substrate).* High saturation current capabilit

Product specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Low C .C =2.0pF ob obPb Complementary to 2SA1037 Lead-free APPLICATIONS NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC2412 BQ/BR/BS SOT-23 : none is for Lead Free package; G is for Halogen Free package. MAXI

2SC2412KNPN Transistors3 2Features1.BaseLow Cob.Cob=2.0pF (Typ.)2.Emitter1 3.Collector Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 7 VCollector current IC 0.15 ACollector power dissipation PC 0.2 WJunction temperature Tj 150

2SC2412TRANSISTOR (NPN)MARKING : Equivalent Circuit :SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: LOW Cob, Cob=2.0 PF(TYP)MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 7 VCollector Current -Continuous IC 150 mACollector Current -Puised ICM 200

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDFEATURES NPN General Purpose TransistorMAXIMUM RATINGS (T =25) aCharacteristic Symbol Rating Unit Collector-Base VoltageV 60 VCBO-Collector-Emitter VoltageV 50 VCEO-Emitte

Plastic-Encapsulate TransistorsFEATURES (NPN)2SC2412Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit2. EMITTER SOT-23VCBO Collector-Base Voltage 60 V 3. COLLECTOVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector P

isc Silicon NPN Power Transistor 2SC2414DESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage

isc Silicon NPN Power Transistor 2SC2416DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage

isc Silicon NPN Power Transistor 2SC2415DESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage