2SC2420. Аналоги и основные параметры
Наименование производителя: 2SC2420
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 175 MHz
Ёмкость коллекторного перехода (Cc): 110 pf
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO129
Аналоги (замена) для 2SC2420
- подборⓘ биполярного транзистора по параметрам
2SC2420 даташит
2sc2429.pdf
isc Silicon NPN Power Transistor 2SC2429 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters and inverters applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Volta
2sc2498.pdf
2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF UHF Band Low Noise Amplifier Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 300
2sc2458.pdf
2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit mm Low Noise Audio Amplifier Applications High current capability IC = 150 mA (max) High DC current gain h = 70 700 FE Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise NF (2) = 0.2dB (typ.), 3dB (max)
2sc2458l.pdf
2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit mm Low Noise Audio Amplifier Applications High current capability IC = 150 mA (max) High DC current gain h = 70 700 FE Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise NF (2) = 0.2dB (typ.), 3dB (max)
2sc2459.pdf
2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2459 Audio Amplifier Applications Unit mm High breakdown voltage VCEO = 120 V (max) High DC current gain h = 200 700 FE Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SA1049. Small package
2sc5659 2sc5659 2sc4618 2sc4098 2sc2413k.pdf
High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter Absolute maximum ratings (Ta=25 C) (3) Collector
2sc2411k.pdf
2SC2411K Datasheet Medium Power Transistor (32V, 500mA) lOutline l Parameter Value SMT3 VCEO 32V IC 500mA 2SC2411K SOT-346 lFeatures l 1) High ICMAX lInner circuit l ICMAX=0.5A 2)Low VCE(sat) Optimal for low voltage operation. 3)Complements the 2SA1036K. lApplication l DRIVING CIRCUIT, LOW FREQ
2sc2412k.pdf
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029. 1.25 1.6 2.1 2.8 Structure Epitaxial planar type 0.1Min. 0.3Min. NPN silicon transistor Each lead has same dimensions Each lead
2sc2412k 2sc4081 2sc4617 2sc5658 2sc1740s.pdf
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN
2sc2411kfra.pdf
2SC2411KFRA 2SC2411K Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units mm) 1) High ICMax. 2SC2411KFRA 2SC2411K ICMax. = 0.5A 2) Low VCE(sat). 2.9 0.2 Optimal for low voltage operation. 1.1+0.2 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 2SA1036KFRA 3) Complements the 2SA1036K. (1) (2) 0 0.1 (3)
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081u3 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081U3 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA17
2sc2412kfra.pdf
2SC2412K FRA Datasheet General purpose small signal amplifier(50V, 150mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO 50V IC 150mA SMT3 lFeatures lInner circuit l l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA1037AK FRA. lApplication l GENERAL PURPOSE SMALL SIGNAL AMPLIFIER
2sc2411-r.pdf
MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
2sc2411-p.pdf
MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
2sc2458-y.pdf
MCC Micro Commercial Components TM 2SC2458-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisture Sensitivity Level 1 Power diss
2sc2482-y.pdf
MCC Micro Commercial Components TM 2SC2482 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2482-O Phone (818) 701-4933 Fax (818) 701-4939 2SC2482-Y Features High Voltage Vceo=300V Small collector output capacitance Cob=3.0pF(Typ) NPN Epoxy meets UL 94 V-0 flammability rating Epitaxial Silicon Moisture Sensitivity Level 1 Lead Free
2sc2411-q.pdf
MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
2sc2482-o.pdf
MCC Micro Commercial Components TM 2SC2482 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2482-O Phone (818) 701-4933 Fax (818) 701-4939 2SC2482-Y Features High Voltage Vceo=300V Small collector output capacitance Cob=3.0pF(Typ) NPN Epoxy meets UL 94 V-0 flammability rating Epitaxial Silicon Moisture Sensitivity Level 1 Lead Free
2sc2405 2sc2406.pdf
Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape
2sc2497.pdf
Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit mm For low-frequency power amplification 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA1096 and 2SA1096A 3.16 0.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25 C Parameter
2sc2480 e.pdf
Transistor 2SC2480 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25
2sc2480.pdf
Transistors 2SC2480 Silicon NPN epitaxial planer type Unit mm 0.40+0.10 For high-frequency amplification / oscillation / mixing 0.05 0.16+0.10 0.06 3 Features 1 2 High transition frequency fT (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 automatic insertion through the tape packing and the magazine 2.90+0.20 0.05 packing.
2sc2405 e.pdf
Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape
2sc2404 e.pdf
Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Abs
2sc2404.pdf
Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Abs
2sc2440.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc2463.pdf
2SC2463 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2463 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 150 mW Junction temper
2sc2471.pdf
2SC2471 Silicon NPN Epitaxial Application UHF Amplifier UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2471 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power diss
2sc2462.pdf
2SC2462 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2462 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Emitter current IE 100 mA Collector power dissipat
2sc2412.pdf
2SC2412 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Cob, Cob=2.0pF A L Complements of the 2SA1037 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2412-Q 2SC2412-R 2SC2412-S Range 120 270 180 390 270 560 D Marking Code BQ B
2sc2411.pdf
2SC2411 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max Collector 3 A 2.800 3.040 FEATURES 1 B 1.200 1.400 Base 2 C 0.890 1.110 n Emitter Power Dissipation o D 0.370 0.500 PCM 200 mW ( Tamb= 25 C) G 1.780 2.040 A n RoHS Compliant Product H 0.013 0.100 L J J 0.085 0.
2sc2412.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2412 TRANSISTOR (NPN) FEATURES 1. BASE Low Cob ,Cob = 2.0 pF (Typ). 2. EMITTER 3. COLLECTOR MARKING BQ, BR, BS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEB
2sc2482.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L 2SC2482 TRANSISTOR (NPN) 1. EMITTER FEATURE High Voltage VCEO=300V 2. COLLECTOR Small Collector Output Capacitance Cob=3.0pF(Typ) 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO Co
2sc2411.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2411 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCE
2sc2458.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC2458 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Current Capability 3. BASE High DC Current Gain 1 2 3 Excellent hFE Linearity Complementary to 2SA1048 Equivalent Circuit C2458 C2458=Device code Solid dot = Green molding compound device,
ad-2sc2412.pdf
www.jscj-elec.com AD-2SC2412 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-2SC2412 series Plastic-Encapsulated Transistor AD-2SC2412 series Transistor (NPN) FEATURES Low Cob ,Cob = 2.0 pF (Typ) AEC-Q101 qualified CLASSIFICATION of hFE Rank AD-2SC2412-Q AD-2SC2412-R AD-2SC2412-S Range 120-270 180-390 270-560 BQ BR BS Marking Version 1.0 1 /
2sc2440.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2440 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Ab
2sc2485.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC2485 DESCRIPTION With TO-3PN package Complement to type 2SA1061 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol LIMITING VALUES SYMB
2sc2438.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2438 DESCRIPTION With TO-220C package Low collector saturation voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Abso
2sc2412.pdf
2SC2412 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE Low Cob ,Cob = 2.0 pF (Typ). 2. EMITTER 3. COLLECTOR MARKING BQ, BR, BS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissi
2sc2411.pdf
2SC2411 SOT-23 TRANSISOR(NPN) 1. BASE 2. EMITTER FEATURES High ICMax.ICMax. = 0.5mA 3. COLLECTOR Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V Collector Current
2sc2411 sot-23.pdf
2SC2411 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 32
2sc2412 sot-23.pdf
2SC2412 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low Cob ,Cob = 2.0 pF (Typ). MARKING BQ, BR, BS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -C
2sc2482.pdf
2SC2482 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 High voltage Vceo=300V 6.200 Small collector output capacitance Cob=3.0pF(Typ) 8.400 8.800 0.900 1.100 0.400 0.600 MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.800 14.200 Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V 1.500 TYP VCE
2sc2482 to-92l.pdf
2SC2482 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 High voltage Vceo=300V 7.800 Small collector output capacitance Cob=3.0pF(Typ) 8.200 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350 0.550 13.800 Symbol Parameter Value Units 14.200 VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter
2sc2412k sot-23-3l.pdf
2SC2412K SOT-23-3L Transistor(NPN) 1. BASE SOT-23-3L 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Low Cob ,Cob = 2.0 pF (Typ). 2.80 1.60 Complements the 2SA1037AK MARKING BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-E
2sc2411k.pdf
2SC2411K NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Total Device Dissipation PD 200 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -55 t
2sc2412k.pdf
2SC2412K NPN 3 1 2 SOT-23 Value V 50 CEO 60 7.0 150 200 1.6 625 T ,Tstg J 1.0 50 50 60 7.0 50 u 0.1 I O Vdc, E= E= 50 0 ) u 0.1 60 0.1 u 7.0 WEITRON 1/5 24-Jul-07 http //www.weitron.com.tw 2SC2412K ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hF
2sc2412kxlt1.pdf
FM120-M WILLAS 2SC2412KxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product NPN Silicon Package outline We declare that the material of product compliance with RoHS requirements. Features Batch process design, excellent power dissipation offers better reverse leakage current and ther
2sc2411kxlt1.pdf
FM120-M WILLAS 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN silicon
2sc2412k.pdf
2SC2412K Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 1 2 PIN1 Base PIN
l2sc2412kqmt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC2412KQMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2
l2sc2412kqlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2
l2sc2412krlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412
l2sc2412kqlt1g l2sc2412kqlt3g l2sc2412krlt1g l2sc2412krlt3g l2sc2412kslt1g l2sc2412kslt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412
l2sc2411kqlt1g.pdf
LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SC2411KQLT1G NPN silicon Series FEATURE S-L2SC2411KQLT1G Epitaxial planar type Series Complementary to L2SA1036K We declare that the material of product are Halogen Free and 3 compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101
l2sc2412ksmt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC
l2sc2412kslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2
l2sc2412kqlt1g l2sc2412krlt1g l2sc2412kslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412
l2sc2411krlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2411KRLT1G FEATURES S-L2SC2411KRLT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT 23 DEVICE MARK
l2sc2412krmt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC2412KQMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2
l2sc2411krlt1g l2sc2411krlt3g.pdf
L2SC2411KRLT1G S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Mark
2sc2412.pdf
SMD Type or SMD Type TransistICs NPN Transistors 2SC2412 (2SC2412K) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Low Cob.Cob=2.0pF (Typ.) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base v
2sc2412-r.pdf
SMD Type IC SMD Type Transistors General Purpose Transistor 2SC2412 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Low Cob.Cob=2.0pF (Typ.) 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage
2sc2463.pdf
SMD Type Transistors NPN Transistors 2SC2463 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Colle
2sc2406.pdf
SMD Type Transistors NPN Transistors 2SC2406 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=55V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1035 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector
2sc2411.pdf
SMD Type Transistors NPN Transistors 2SC2411 (2SC2411K) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.5A 1 2 Low VCE(sat).Optimal for low voltage operation. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Complements the 2SA1036/2SA1036K 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter
2sc2405.pdf
SMD Type Transistors NPN Transistors 2SC2405 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=35V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1034 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector
2sc2412-s.pdf
SMD Type IC SMD Type Transistors General Purpose Transistor 2SC2412 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Low Cob.Cob=2.0pF (Typ.) 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage
2sc2480.pdf
SMD Type Transistors NPN Transistors 2SC2480 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc2412-q.pdf
SMD Type IC SMD Type Transistors General Purpose Transistor 2SC2412 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Low Cob.Cob=2.0pF (Typ.) 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage
2sc2462.pdf
SMD Type Transistors NPN Transistors 2SC2462 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect
2sc2404.pdf
SMD Type Transistors NPN Transistors 2SC2404 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc2411k.pdf
2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW FEATURES 0.120(3.04) NPN epitaxial silicon,planar design 0.110(2.80) Collector-emitter voltage VCE=32V Collector current IC=500mA Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICAL DAT
2sc2411kgp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC2411KGP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) CONST
2sc2412kgp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC2412KGP SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) CONST
2sc2412wgp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC2412WGP SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (mounted on ceramic substrate). * High saturation current capabilit
2sc2412.pdf
Product specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Low C .C =2.0pF ob ob Pb Complementary to 2SA1037 Lead-free APPLICATIONS NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC2412 BQ/BR/BS SOT-23 none is for Lead Free package; G is for Halogen Free package. MAXI
2sc2412k-q 2sc2412k-r 2sc2412k-s.pdf
2SC2412K NPN Transistors 3 2 Features 1.Base Low Cob.Cob=2.0pF (Typ.) 2.Emitter 1 3.Collector Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150
2sc2412q 2sc2412r 2sc2412s.pdf
2SC2412 TRANSISTOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES LOW Cob, Cob=2.0 PF(TYP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 7 V Collector Current -Continuous IC 150 mA Collector Current -Puised ICM 200
2sc2412.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD FEATURES NPN General Purpose Transistor MAXIMUM RATINGS (T =25 ) a Characteristic Symbol Rating Unit Collector-Base Voltage V 60 V CBO - Collector-Emitter Voltage V 50 V CEO - Emitte
2sc2412.pdf
Plastic-Encapsulate Transistors FEATURES (NPN) 2SC2412 Low Cob ,Cob = 2.0 pF (Typ). MARKING BQ, BR, BS MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER SOT-23 VCBO Collector-Base Voltage 60 V 3. COLLECTO VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector P
2sc2461a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2461A DESCRIPTION With TO-3 Package Complementary to 2SA1051A Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Recommended for 10W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol
2sc2440.pdf
isc Silicon NPN Power Transistor 2SC2440 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400(V)(Min.) CEO(SUS) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE
2sc2486.pdf
isc Silicon NPN Power Transistor 2SC2486 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1062 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sc2488.pdf
isc Silicon NPN Power Transistor 2SC2488 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SA1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATI
2sc2489.pdf
isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION Good Linearity of h FE Collector-Emitter Sustaining Voltage- V = 150V (Min) CEO(SUS) Wide Area of Safe Operation Complement to Type 2SA1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier,high power amplifier applications. ABSOLUTE MAXIMUM RA
2sc2485.pdf
isc Silicon NPN Power Transistor 2SC2485 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sc2482.pdf
INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2482 DESCRIPTION High breakdown voltage Low output capacitance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV chroma output applications Color TV horiz. driver applications High voltage switching and amplifier applications ABSOLUTE MA
2sc245.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC245 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 120 V CBO V
2sc2414.pdf
isc Silicon NPN Power Transistor 2SC2414 DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage
2sc2438.pdf
isc Silicon NPN Power Transistor 2SC2438 DESCRIPTION Low Collector Saturation Voltage- V = 0.5(V)(Max)@ I = 4A CE(sat) C High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE M
2sc2437.pdf
isc Silicon NPN Power Transistor 2SC2437 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
2sc2433.pdf
isc Silicon NPN Power Transistor 2SC2433 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SA1043 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications High frequency power amplifier Switching regula
2sc2416.pdf
isc Silicon NPN Power Transistor 2SC2416 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage
2sc2484.pdf
isc Silicon NPN Power Transistor 2SC2484 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1060 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
2sc2497 2sc2497a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION With TO-126 package Complement to type 2SA1096/A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 )
2sc2415.pdf
isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage
2sc2481.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2481 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High Current Capability High Collector Power Dissipation Complement to Type 2SA1021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vertical deflection output applications. Col
2sc2408.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz High Gain S 2 = 21 dB TYP. ;@ f = 200 MHz 21e Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
2sc2461.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2461 DESCRIPTION With TO-3 Package Complementary to 2SA1051 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Recommended for 10W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta
2sc2460.pdf
isc Silicon NPN Power Transistor 2SC2460 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Complement to Type 2SA1050 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
Другие транзисторы: 2SC2413, 2SC2414, 2SC2415, 2SC2416, 2SC2417, 2SC2418, 2SC2419, 2SC242, 431, 2SC2421, 2SC2422, 2SC2423, 2SC2424, 2SC2425, 2SC2427, 2SC2428, 2SC2429
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