Биполярный транзистор 2SC245 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC245
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 18 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
2SC245 Datasheet (PDF)
2sc245.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC245DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 120 VCBOV
2sc2458.pdf
2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit: mmLow Noise Audio Amplifier Applications High current capability: IC = 150 mA (max) High DC current gain: h = 70~700 FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
2sc2458l.pdf
2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit: mm Low Noise Audio Amplifier Applications High current capability: IC = 150 mA (max) High DC current gain: h = 70~700 FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
2sc2459.pdf
2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2459 Audio Amplifier Applications Unit: mm High breakdown voltage: VCEO = 120 V (max) High DC current gain: h = 200~700 FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1049. Small package
2sc2458-y.pdf
MCCMicro Commercial ComponentsTM2SC2458-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPNCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Level 1 Power diss
2sc2458-gr.pdf
MCC2SC2458-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2458-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPNCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Level 1
2sc2458.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S 2SC2458 TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR High Current Capability3. BASE High DC Current Gain123 Excellent hFE Linearity Complementary to 2SA1048 Equivalent Circuit C2458C2458=Device codeSolid dot = Green molding compound device,
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050